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Projects/Programs

Topic Area
Displaying 126 - 150 of 470
X-ray Security-Screening

Documentary Standards: X-ray Security Screening Applications

Ongoing
This work fills well-documented gaps in transportation security, which have been highlighted in Executive and Legislative requirements for 100 % screening of baggage, cargo, and airline passengers. This is accomplished through a corpus of new standards, test methods, test artifacts, dosimetry
Contrast enhancement at the diffraction limit using DUV Fourier ptychography (left) and 3D reconstructed image (right).

DUV/EUV Nanoscopy for Imaging Nanostructures

Ongoing
Novel optical nanoscopy techniques using deep-ultraviolet (DUV) and extreme-ultraviolet (EUV) laser sources are developed to characterize nanostructures with high dimensional sensitivity and low uncertainty for advancing the semiconductor devices manufacturing process. The illumination beam is
EUV graphs

Dynamic EUV Imaging and Spectroscopy for Microelectronics

Ongoing
Collaborations with industry leaders have led us to develop new measurement techniques to improve our understanding thermal transport, spin transport, and nanoscopic (and interfacial) material properties in active device structures. Such capability requires the ability to measure these properties at
Dynamic EUV Metrology of Nanoscopic Thermal Transport in Active Devices

Dynamic EUV Metrology of Nanoscopic Thermal Transport in Active Devices

Ongoing
Heat is greatly impeding progress in microelectronics, which is only getting worse as dimensions are reduced and device architectures move more towards being 3-dimensional. The dynamics and physics of nanoscale thermal transport are unknown and dynamic measurements of active devices at this scale do
Anechoic-Chamber-400 X 324

Dynamic Mechanical Metrology: Acceleration, Force, and Acoustics

Ongoing
The Dynamic Mechanical Metrology Project develops standards and provides calibrations for SI-traceable acceleration, acoustical and dynamic force metrology. We develop improved reference standards and calibration techniques, sensor-embedded standards, calibration techniques for new technologies, and
Optofluidic device

Dynamic Nanoflow Metrology

Ongoing
Ultra-precise and dynamic flow measurements are needed for high-throughput biological studies and for dynamic control of chemical delivery systems in medical and biotechnology applications. In addition, existing analytical methods, such as analytical high-performance liquid chromatography (HPLC) and
photo of membrane in shock tube

Dynamic Pressure

Ongoing
Measurement Platform: We are developing a photonics based dynamic pressure measurement platform that will enable traceable, accurate measurement of dynamic pressure. To this end we are developing fast scanning laser absorption spectroscopy techniques that enable rapid measurement of pressure

Efficient Optical Spectroscopy of Single Solid-State Quantum Emitters

Ongoing
For emitters embedded in semiconductors, such as a quantum dot in GaAs, the fluorescence collection efficiency is limited by the large refractive index contrast between the semiconductor in comparison to the surrounding air. This causes most of the light emission to remain trapped in the
Allen Goldstein

Electric Power Metrology and the Smart Grid

Ongoing
Major advancements in electric power generation, transmission, distribution and loads over the last 20 years have led to improvements, reliability, robustness, efficiency and energy security unlike anything from the proceeding 80 years. Combined, this power grid modernization has been called the
Massively parallel wafer-level long-term reliability test system featuring 30 fully functioning mini probe stations each supporting 100 probe pins with all the supporting stress/measure electronics integrated (without cables).

Electrical Characterization of Nanoscale Electron Devices

Ongoing
Over the decades, many measurement methods were developed to meet the needs of advancing electron device/circuit/system technology. As technology continue to advance, new needs continue to surface, either due to old measurements are no longer adequate or due to no established method exists. A case
Electric Field Gradient reference prototype

Electrical Scanning Probe Microscopy

Ongoing
Electrical scanning probe microscopes (eSPMs) are a subset of scanning probe microscopes which measure some electrical parameter as well as surface topography. These include techniques such as scanning capacitance microscopy (SCM), scanning spreading resistance microscopy (SSRM), conductive atomic
surface acoustic wave sensor

Electroacoustic Wave-Based Flow Sensors

Ongoing
As part of our NIST-on-a-Chip efforts, we are developing strategies to measure local flow in microfluidic systems. This project will develop label-free flow sensors using surface acoustic waves embedded in microfluidic devices. In this approach, an electromechanical transducer is placed on a
EBIT

Electron Beam Ion Trap (EBIT) Facility

Ongoing
The NIST EBIT is a table-top device which can produce matter in excess of ten million degrees Kelvin. At these temperatures, even the heaviest atoms shed most of their electrons. The highly charged ions which result are trapped by a configuration of electric and magnetic fields in an ultrahigh
Three-dimensional view of carbon nanostructures grown on the surface of a glass fiber

Electron Microscopy of Carbon Nanotube Composites

Ongoing
Multi-wall CNTs (MWCNTs) are a common nano-carbon reinforcement material and are frequently dispersed into a polymer matrix to form composites that can be engineered with specific combinations of desirable properties – electrical, thermal, optical and mechanical, etc. However, this
solar cells

Electron-Beam Irradiation of Solar Cells

Ongoing
NIST irradiates solar cells that are manufactured by leading developers of high-efficiency solar photovoltaic cells for space applications. As part of the space-qualification process, the performance of these cells in a space environment must be validated. This validation process includes the
Electron-beam lithography

Electron-beam lithography

Ongoing
Electron-beam lithography allows fine control of nanostructure features that form the basis of diverse device technologies. Lateral resolution of 10 nm, placement accuracy of 1 nm, and patterning fields of 1 mm are all possible. However, achieving these performance metrics depends on many
modular measurement platform

Electronic Biophysical Measurements

Ongoing
We develop measurements that leverage electronic signal transduction using FETs to maximize sensitivity and improve the resolution of biomolecular measurements. The techniques allow direct charge transduction during molecular interactions to quantify fundamental biophysical processes. Critically the
Blue rectangle with green line through it. Electron Solid Interaction Illustration.

Electron-Solid Interactions

Ongoing
A measuring instrument produces a signal that depends upon the value of the measurand. The value and its uncertainty are inferred from the signal by using a model of their relationship. Erroneous models lead to erroneous inference. The accuracy of SEM (scanning electron microscopy) is limited by
circuit

Emerging Hardware for Artificial Intelligence

Ongoing
Here is a brief description of our work with links to recent papers from our investigations, broadly classified as experimental and modeling. A brief overview of Josephson junction-based bio-inspired computing can be found in our review article. Experimental We have facilities to develop our devices
Electron micrographs of representative as-synthesized MNPs for thermometry.

Engineering and Optical Characterization of Magnetic Nanoparticles (MNPs)

Completed
Nanomagnets by Design Nanoparticles are an important subclass of low-dimensional magnetic materials displaying size-dependent magnetic behavior. The controllable magnetocrystalline anisotropy introduced at nanoscale size regimes (as low as 3 nms in diameter) allows for MNPs of ferro/ferrimagnetic
STM image of a 28-Si film deposited onto a Si/100 substrate

Enriched Silicon and Devices for Quantum Information

Ongoing
Enriching silicon from 5% to <1 ppm 29Si Groundbreaking work around the world has realized qubits in silicon using metal-oxide-semiconductor (MOS) devices, single atomic dopants/defects and SiGe heterostructures, and, in all cases, the qubit coherence and fidelity properties are improved when using