Projects/Programs

Displaying 1 - 25 of 87

Accurate Cure Kinetics, Stress, Mechanical Properties and Warpage

Ongoing

Advanced packaging involves increasingly challenging requirements for heterogeneous integration and chiplet packaging. Needs such as fine pitch interconnects

Advanced Analytical Electron Tomography for Materials Development and Failure Analysis in Semiconductor Devices

Ongoing

Conventional TEM imaging was sufficient for decades in the semiconductor industry, but its utility is declining as device designs become more complex and as feature sizes continue to shrink. Conventional imaging modes are challenged by the small, complex structures which are vital to current and

Advanced Materials: Elemental and Chemical Analysis of Microstructured Materials

Ongoing

Projects: DTSA-II – Pushing the Limits of Energy Dispersive X-ray Spectrometry Multimodal Superresolution Microscopy Forensic Trace Evidence

Advanced Metrology to Enable Next Generation EUV Photoresists

Ongoing

EUV (extreme ultraviolet) lithography, the technology that “saved Moore’s Law,” is widely regarded as the future of cutting-edge nanofabrication. It was developed in the United States and U.S. companies in many parts of the EUV ecosystem have established dominance in the field that must be defended

Advancing Power Electronics with Defect Metrology

Ongoing

Power electronics play a central role in all aspects of electrical energy storage, distribution, conversion, and consumption. Currently, power electronics heavily rely on Si-based insulated-gate bipolar transistors (IGBT), which have large footprints, are inefficient, and require extensive cooling

$Four examples of Transmission electron diffraction patterns obtained in a scanning electron microscope.$

Analytical Scanning Transmission Electron Microscopy in a Scanning Electron Microscope (STEM-in-SEM)

Ongoing

Conventional transmission electron imaging does not necessarily show both strong contrast and high spatial resolution for nanomaterials or soft matter. This is particularly the case for isolated nanostructures or low- Z materials like polymers or biomaterials. For example, consider structures in the

Atom Probe Tomography: Nanostructured Semiconductor Materials, Interfaces, and Devices

Ongoing

Atom probe tomography (APT) is a unique analytical tool capable of providing 3D atomic maps of any element in the periodic table with sub-nm spatial resolution and high analytical sensitivity (in the ppm range, in some cases). APT is currently employed by many of the largest semiconductor

a conceptual diagram of a gate-all-around (GAA) field-effect transistor

Causal Green's function simulations of phonons for multiscale/multiphysics modeling of thermal transport in gate-allaround transistors

Ongoing

Heat management in modern semiconductor devices at nanoscal es is a multiscale and multiphysics problem of strong industrial interest. The power density in modern nanoscale devices becomes extremely high, whichcan drastically reduce the efficiency and the lifespan of the device. This problem

RF Channel Propagation Measurements and Models for Communications Circuits

Ongoing

The research community has long identified the need for propagation measurements to develop and evaluate communication circuits. Since 2011, NIST has been to prototyping state-of-the-art channel sounders for measuring RF channel propagation. NIST current channel sounders include LIDAR and camera

Characterization of Nano-to-Microscale Process-Induced Thermo-Mechanical Changes in Heterogeneously Integrated Microelectronics

Ongoing

Across the entire semiconductor industry, issues related to thermomechanical mismatches encountered during packaging are limiting factors in the design and fabrication of 3D modular integrated circuits. This project will develop novel and necessary metrologies for thermomechanical properties of

Chemical Functionalization and Manipulation of Nano Materials

Ongoing

This project focuses on manipulating nanomaterials, including weakly bonded van der Waals systems, and probing emergent phenomena in these nanoengineered systems to impact technologies such as nanoelectronics, optoelectronics, quantum sensing, and quantum computing. Developing processes to

Diagram of the CDSAXS method, shows an x-ray beam going through a sample and onto an e-ray detector.

Critical Dimension Small Angle X-Ray Scattering (CDSAXS) for Next Generation in-line Metrology

Ongoing

The semiconductor industry is in need of new in-line dimensional metrology methods to measure the size and shape of nanoscale structures such as gate-all-around transistors, 3D-NAND, and 3D-DRAM for process control. The NIST-developed CDSAXS method has recently been commercialized for

Degradation of extreme-ultraviolet optics

Ongoing

The primary degradation process in EUVL tools and satellite instruments begins by the adsorption of water or carbonaceous molecules from the vacuum environment onto the optic surface. The optic is damaged if the molecule undergoes photon-stimulated decomposition before it can (reversibly) thermally

Designing the Nanoworld: Nanostructure, Nanodevices, and Nano-optics

Ongoing

Developing and exploiting nanodevices for quantum and nanotechnologies requires nanoscale and atomic scale modeling of ultrasmall structures, devices, their operation, and their response to probes. Key challenges of understanding physics at the quantum/classical interface and measurement at the

Dimensional Metrology for Nanoscale Patterns

Completed

Dimensional metrology and control is a critical component of semiconductor fabrication. State-of-the-art integrated circuits are comprised of nearly a billion nanoscale transistors linked together by an equally as impressive nanoscale network of conductors, insulators, and capacitors. To ensure that

Dynamic EUV Imaging and Spectroscopy for Microelectronics

Ongoing

Collaborations with industry leaders have led us to develop new measurement techniques to improve our understanding thermal transport, spin transport, and nanoscopic (and interfacial) material properties in active device structures. Such capability requires the ability to measure these properties at

Dynamic EUV Metrology of Nanoscopic Thermal Transport in Active Devices

Ongoing

Heat is greatly impeding progress in microelectronics, which is only getting worse as dimensions are reduced and device architectures move more towards being 3-dimensional. The dynamics and physics of nanoscale thermal transport are unknown and dynamic measurements of active devices at this scale do

Electro-acoustic Metrology of Piezoelectric Materials for Wireless Communications

Ongoing

Microwave acoustic filters are widely used to separate and process incoming and outgoing antenna signals on multiple frequency bands for mobile communications, including 5G, WiFi, and Bluetooth data transfer. The U.S. currently dominates manufacturing of these devices, and is home to several major

Electronic Material Characterization

Ongoing

Manufacturing optimized devices that incorporate newly-emerging materials requires predictable performance throughout device lifetimes. Unexpected degradation in device performance, sometimes leading to failure, is often traceable to poor material reliability. Reliability is rooted in the stability

Electron-Solid Interactions

Ongoing

A measuring instrument produces a signal that depends upon the value of the measurand. The value and its uncertainty are inferred from the signal by using a model of their relationship. Erroneous models lead to erroneous inference. The accuracy of SEM (scanning electron microscopy) is limited by

STM image of a 28-Si film deposited onto a Si/100 substrate

Enriched Silicon and Devices for Quantum Information

Ongoing

Enriching silicon from 5% to <1 ppm 29Si Groundbreaking work around the world has realized qubits in silicon using metal-oxide-semiconductor (MOS) devices, single atomic dopants/defects and SiGe heterostructures, and, in all cases, the qubit coherence and fidelity properties are improved when using

EUV Scatterometry

Ongoing

To measure and inspect the smallest printed features on an IC chip, researchers and manufacturers use a combination of electron scanning modalities (i.e., transmission electron and scanning electron microscopies) and an optical method, scatterometry. Industrially, the most common modality for

Extreme Atom Probe Tomography

Ongoing

Sub-nanometer-resolved 3-D chemical mapping of any atom in any solid continues to be an imperative goal of materials research. If reduced to practice, it would have profound scientific, engineering, and economic impacts on U.S. industries collectively worth hundreds of billions of dollars. Such

Extreme ultraviolet optical constants

Ongoing

Measurements of EUV optical constants are often made by measuring the absorption or near-normal-incidence reflectivity, then performing transforms to obtain both the real and imaginary parts of the index. These sorts of measurements have considerable uncertainty because they require knowledge of

Flow Metering and Properties for Semiconductor Process Gases

Ongoing

A type of flow meter called a mass flow controller (MFC) is used to regulate gas flow in order to produce the desired structures during chip fabrication. As semiconductor manufacturing advances, the requirements on MFC performance are increasingly strict: any process variation can reduce device

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