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Projects/Programs

Displaying 1 - 25 of 87

Advanced Metrology to Enable Next Generation EUV Photoresists

Ongoing
EUV (extreme ultraviolet) lithography, the technology that “saved Moore’s Law,” is widely regarded as the future of cutting-edge nanofabrication. It was developed in the United States and U.S. companies in many parts of the EUV ecosystem have established dominance in the field that must be defended

Advancing Power Electronics with Defect Metrology

Ongoing
Power electronics play a central role in all aspects of electrical energy storage, distribution, conversion, and consumption. Currently, power electronics heavily rely on Si-based insulated-gate bipolar transistors (IGBT), which have large footprints, are inefficient, and require extensive cooling

RF Channel Propagation Measurements and Models for Communications Circuits

Ongoing
The research community has long identified the need for propagation measurements to develop and evaluate communication circuits. Since 2011, NIST has been to prototyping state-of-the-art channel sounders for measuring RF channel propagation. NIST current channel sounders include LIDAR and camera

Chemical Functionalization and Manipulation of Nano Materials

Ongoing
This project focuses on manipulating nanomaterials, including weakly bonded van der Waals systems, and probing emergent phenomena in these nanoengineered systems to impact technologies such as nanoelectronics, optoelectronics, quantum sensing, and quantum computing. Developing processes to

Degradation of extreme-ultraviolet optics

Ongoing
The primary degradation process in EUVL tools and satellite instruments begins by the adsorption of water or carbonaceous molecules from the vacuum environment onto the optic surface. The optic is damaged if the molecule undergoes photon-stimulated decomposition before it can (reversibly) thermally

Designing the Nanoworld: Nanostructure, Nanodevices, and Nano-optics

Ongoing
Developing and exploiting nanodevices for quantum and nanotechnologies requires nanoscale and atomic scale modeling of ultrasmall structures, devices, their operation, and their response to probes. Key challenges of understanding physics at the quantum/classical interface and measurement at the

Dimensional Metrology for Nanoscale Patterns

Completed
Dimensional metrology and control is a critical component of semiconductor fabrication. State-of-the-art integrated circuits are comprised of nearly a billion nanoscale transistors linked together by an equally as impressive nanoscale network of conductors, insulators, and capacitors. To ensure that

Dynamic EUV Imaging and Spectroscopy for Microelectronics

Ongoing
Collaborations with industry leaders have led us to develop new measurement techniques to improve our understanding thermal transport, spin transport, and nanoscopic (and interfacial) material properties in active device structures. Such capability requires the ability to measure these properties at

Dynamic EUV Metrology of Nanoscopic Thermal Transport in Active Devices

Ongoing
Heat is greatly impeding progress in microelectronics, which is only getting worse as dimensions are reduced and device architectures move more towards being 3-dimensional. The dynamics and physics of nanoscale thermal transport are unknown and dynamic measurements of active devices at this scale do

Electronic Material Characterization

Ongoing
Manufacturing optimized devices that incorporate newly-emerging materials requires predictable performance throughout device lifetimes. Unexpected degradation in device performance, sometimes leading to failure, is often traceable to poor material reliability. Reliability is rooted in the stability

Electron-Solid Interactions

Ongoing
A measuring instrument produces a signal that depends upon the value of the measurand. The value and its uncertainty are inferred from the signal by using a model of their relationship. Erroneous models lead to erroneous inference. The accuracy of SEM (scanning electron microscopy) is limited by

Enriched Silicon and Devices for Quantum Information

Ongoing
Enriching silicon from 5% to <1 ppm 29Si Groundbreaking work around the world has realized qubits in silicon using metal-oxide-semiconductor (MOS) devices, single atomic dopants/defects and SiGe heterostructures, and, in all cases, the qubit coherence and fidelity properties are improved when using

EUV Scatterometry

Ongoing
To measure and inspect the smallest printed features on an IC chip, researchers and manufacturers use a combination of electron scanning modalities (i.e., transmission electron and scanning electron microscopies) and an optical method, scatterometry. Industrially, the most common modality for

Extreme Atom Probe Tomography

Ongoing
Sub-nanometer-resolved 3-D chemical mapping of any atom in any solid continues to be an imperative goal of materials research. If reduced to practice, it would have profound scientific, engineering, and economic impacts on U.S. industries collectively worth hundreds of billions of dollars. Such

Extreme ultraviolet optical constants

Ongoing
Measurements of EUV optical constants are often made by measuring the absorption or near-normal-incidence reflectivity, then performing transforms to obtain both the real and imaginary parts of the index. These sorts of measurements have considerable uncertainty because they require knowledge of

Flow Metering and Properties for Semiconductor Process Gases

Ongoing
A type of flow meter called a mass flow controller (MFC) is used to regulate gas flow in order to produce the desired structures during chip fabrication. As semiconductor manufacturing advances, the requirements on MFC performance are increasingly strict: any process variation can reduce device