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Search Publications by Yanfei Yang

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Displaying 1 - 25 of 27

A self-assembled graphene ribbon grown on SiC

Bi Y. Wu, Yanfei Yang, Albert F. Rigosi, Jiuning Hu, Hsin Y. Lee, Guangjun Cheng, Vishal Panchal, Mattias Kruskopf, Hanbyul Jin, Kenji Watanabe, Takashi Taniguchi, David B. Newell, Randolph E. Elmquist, Chi-Te Liang

Utilizing confocal laser scanning microscopy for rapid optical characterization of graphene

Vishal Panchal, Yanfei Yang, Guangjun Cheng, Jiuning Hu, Mattias Kruskopf, Chieh-I Liu, Albert F. Rigosi, Christos Melios, Angela R. Hight Walker, David B. Newell, Olga Kazakova, Randolph E. Elmquist
Confocal laser scanning microscopy (CLSM) is a non-destructive, highly-efficient optical characterization method for large-area analysis of graphene on

Epitaxial Graphene for High-Current QHE Resistance Standards

Mattias Kruskopf, Jiuning Hu, Bi Y. Wu, Yanfei Yang, Hsin Y. Lee, Albert F. Rigosi, David B. Newell, Randolph E. Elmquist
We report the growth of large-area monolayer graphene on the centimeter scale using an optimized growth process allowing for reproducibility and morphology

Epitaxial Graphene p-n Junctions

Jiuning Hu, Mattias Kruskopf, Yanfei Yang, Bi Y. Wu, Jifa Tian, Alireza R. Panna, Albert F. Rigosi, Hsin Y. Lee, George R. Jones Jr., Marlin E. Kraft, Dean G. Jarrett, Kenji Watanabe, Takashi Taniguchi, Randolph E. Elmquist, David B. Newell
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexgonal boron nitride (hBN) is used as the gate

A Table-Top Graphene Quantized Hall Standard

Albert F. Rigosi, Alireza R. Panna, Shamith U. Payagala, George R. Jones Jr., Marlin E. Kraft, Mattias Kruskopf, Bi Y. Wu, Hsin Y. Lee, Yanfei Yang, Dean G. Jarrett, Randolph E. Elmquist, David B. Newell
We report the performance of a quantum standard based on epitaxial graphene maintained in a 5 T table-top cryocooler system. The ν = 2 resistance plateau, with

Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene

Albert F. Rigosi, Heather M. Hill, Nicholas R. Glavin, Sujitra J. Pookpanratana, Yanfei Yang, Alexander G. Boosalis, Jiuning Hu, Anthony Rice, Andrew A. Allerman, Nhan V. Nguyen, Christina A. Hacker, Randolph E. Elmquist, Angela R. Hight Walker, David B. Newell
Monolayer epitaxial graphene (EG), grown on the Si face of SiC, is an advantageous material for a variety of electronic and optical applications. EG forms as a

Preservation of surface conductivity and dielectric loss tangent in large-scale, encapsulated epitaxial graphene measured by non-contact microwave cavity perturbations

Albert F. Rigosi, Nicholas R. Glavin, Chieh-I Liu, Yanfei Yang, Jan Obrzut, Heather M. Hill, Jiuning Hu, Hsin Y. Lee, Angela R. Hight Walker, Curt A. Richter, Randolph E. Elmquist, David B. Newell
Regarding the improvement of current quantized Hall resistance (QHR) standards, one promising avenue is the growth of homogeneous monolayer epitaxial graphene

Insulator-quantum Hall transition in monolayer epitaxial graphene

Lung-I Huang, Yanfei Yang, Randolph E. Elmquist, Shun-Tsung Lo, Fan-Hung H. Liu, Chi-Te Laing
We report on magneto-transport measurements on low-density, large-area monolayer epitaxial graphene devices grown on SiC. We observe temperature (T)-independent

Surface conductance of graphene from non-contact resonant cavity

Jan Obrzut, Caglar Dogu Emiroglu, Oleg A. Kirillov, Yanfei Yang, Randolph E. Elmquist
A method is established to reliably determine surface conductance of single-layer or multi-layer atomically thin nano-carbon graphene structures. These can be

Quantized Hall resistance in large-scale monolayer graphene

Yanfei Yang, Chiashain Chuang, Chieh W. Liu, Randolph E. Elmquist
Abstract: Graphene is an atomic-thickness carbon lattice that can be exfoliated from solid graphite or grown using high temperature processing methods on a

Development of Low Carrier Density Graphene Devices

Yanfei Yang, Lung-I Huang, David B. Newell, Yasuhiro Fukuyama, Mariano A. Real, Randolph E. Elmquist
Epitaxial graphene on SiC(0001) is used to fabricate Hall bar structures for metrological applications with a fabrication process that has been developed to