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Epitaxial Graphene for High-Current QHE Resistance Standards



Mattias Kruskopf, Jiuning Hu, Bi Y. Wu, Yanfei Yang, Hsin Y. Lee, Albert F. Rigosi, David B. Newell, Randolph E. Elmquist


We report the growth of large-area monolayer graphene on the centimeter scale using an optimized growth process allowing for reproducibility and morphology improvements. Magneto-transport measurements on graphene quantum Hall effect devices demonstrate the applicability for high-current quantum resistance metrology.
Proceedings Title
CPEM 2018 Conference Digest
Conference Dates
July 8-13, 2018
Conference Location
Conference Title
CPEM 2018


epitaxial graphene, face-to-graphite (FTG), polymer-assisted growth (PASG), quantum resistance metrology


Kruskopf, M. , Hu, J. , Wu, B. , Yang, Y. , Lee, H. , Rigosi, A. , Newell, D. and Elmquist, R. (2018), Epitaxial Graphene for High-Current QHE Resistance Standards, CPEM 2018 Conference Digest, Paris, -1 (Accessed April 16, 2024)
Created July 9, 2018, Updated July 17, 2018