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Epitaxial Graphene for High-Current QHE Resistance Standards

Published

Author(s)

Mattias Kruskopf, Jiuning Hu, Bi Y. Wu, Yanfei Yang, Hsin Y. Lee, Albert F. Rigosi, David B. Newell, Randolph E. Elmquist

Abstract

We report the growth of large-area monolayer graphene on the centimeter scale using an optimized growth process allowing for reproducibility and morphology improvements. Magneto-transport measurements on graphene quantum Hall effect devices demonstrate the applicability for high-current quantum resistance metrology.
Proceedings Title
CPEM 2018 Conference Digest
Conference Dates
July 8-13, 2018
Conference Location
Paris
Conference Title
CPEM 2018

Keywords

epitaxial graphene, face-to-graphite (FTG), polymer-assisted growth (PASG), quantum resistance metrology

Citation

Kruskopf, M. , Hu, J. , Wu, B. , Yang, Y. , Lee, H. , Rigosi, A. , Newell, D. and Elmquist, R. (2018), Epitaxial Graphene for High-Current QHE Resistance Standards, CPEM 2018 Conference Digest, Paris, -1 (Accessed April 16, 2024)
Created July 9, 2018, Updated July 17, 2018