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Quantum transport in graphene p-n junctions with Moiré superlattice modulation

Published

Author(s)

Jiuning Hu, Albert Rigosi, Ji Ung Lee, Hsin Y. Lee, Yanfei Yang, Chieh-I Liu, Randolph Elmquist, David B. Newell

Abstract

This work presents simulations of quantum transport in graphene p-n junctions (pnJs) in which Moire superlattice potentials are incorporated to demonstrate the interplay of the effect of pnJs and Moire superlattice potentials. It is shown that the longitudinal and Hall resistivity maps can be strongly modulated by parameters such as the pnJ profile, junction height, and Moire potentials. Device resistance measurements are subsequently performed on graphene/h-BN heterostructure samples with accurate alignment of crystallographic orientations to complement and support the simulation results.
Citation
Physical Review B

Keywords

Moire superlattice, p-n junctions, graphene

Citation

Hu, J. , Rigosi, A. , Lee, J. , Lee, H. , Yang, Y. , Liu, C. , Elmquist, R. and Newell, D. (2018), Quantum transport in graphene p-n junctions with Moiré superlattice modulation, Physical Review B (Accessed April 22, 2024)
Created July 11, 2018, Updated October 12, 2021