Epitaxial Graphene p-n Junctions

Published: July 09, 2018

Author(s)

Jiuning Hu, Mattias Kruskopf, Yanfei Yang, Bi Y. Wu, Jifa Tian, Alireza R. Panna, Albert F. Rigosi, Hsin Y. Lee, George R. Jones Jr., Marlin E. Kraft, Dean G. Jarrett, Kenji Watanabe, Takashi Taniguchi, Randolph E. Elmquist, David B. Newell

Abstract

We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexgonal boron nitride (hBN) is used as the gate dielectric. The four terminal longitudinal resistance across a single junction is well quantized at R_{K-90} with a relative uncertainty of 10^{-7}. Our work opens the possibility to realize programmable electrical resistance standards using external gating.
Proceedings Title: CPEM 2018 Conference Digest
Conference Dates: July 8-13, 2018
Conference Location: Paris, -1
Conference Title: CPEM 2018
Pub Type: Conferences

Keywords

Epitaxial graphene, graphene p-n junction, quantum Hall effect, resistance standard
Created July 09, 2018, Updated May 22, 2018