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PUBLICATIONS

Epitaxial Graphene p-n Junctions

Published

Author(s)

Jiuning Hu, Mattias Kruskopf, Yanfei Yang, Bi Y. Wu, Jifa Tian, Alireza R. Panna, Albert F. Rigosi, Hsin Y. Lee, George R. Jones Jr., Marlin E. Kraft, Dean G. Jarrett, Kenji Watanabe, Takashi Taniguchi, Randolph E. Elmquist, David B. Newell

Abstract

We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexgonal boron nitride (hBN) is used as the gate dielectric. The four terminal longitudinal resistance across a single junction is well quantized at R_{K-90} with a relative uncertainty of 10^{-7}. Our work opens the possibility to realize programmable electrical resistance standards using external gating.
Proceedings Title
CPEM 2018 Conference Digest
Conference Dates
July 8-13, 2018
Conference Location
Paris
Conference Title
CPEM 2018
Pub Type
Conferences

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Keywords

Epitaxial graphene, graphene p-n junction, quantum Hall effect, resistance standard
Flexible electronics, Metrology, Nanotechnology, Nanomaterials and Condensed matter

Citation

Hu, J. , Kruskopf, M. , Yang, Y. , Wu, B. , Tian, J. , Panna, A. , Rigosi, A. , Lee, H. , Jones, G. , Kraft, M. , Jarrett, D. , Watanabe, K. , Taniguchi, T. , Elmquist, R. and Newell, D. (2018), Epitaxial Graphene p-n Junctions, CPEM 2018 Conference Digest, Paris, -1, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=925113 (Accessed October 8, 2025)

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Created July 9, 2018, Updated July 25, 2019
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