Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Epitaxial Graphene p-n Junctions

Published

Author(s)

Jiuning Hu, Mattias Kruskopf, Yanfei Yang, Bi Y. Wu, Jifa Tian, Alireza R. Panna, Albert F. Rigosi, Hsin Y. Lee, George R. Jones Jr., Marlin E. Kraft, Dean G. Jarrett, Kenji Watanabe, Takashi Taniguchi, Randolph E. Elmquist, David B. Newell

Abstract

We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexgonal boron nitride (hBN) is used as the gate dielectric. The four terminal longitudinal resistance across a single junction is well quantized at R_{K-90} with a relative uncertainty of 10^{-7}. Our work opens the possibility to realize programmable electrical resistance standards using external gating.
Proceedings Title
CPEM 2018 Conference Digest
Conference Dates
July 8-13, 2018
Conference Location
Paris
Conference Title
CPEM 2018

Keywords

Epitaxial graphene, graphene p-n junction, quantum Hall effect, resistance standard

Citation

Hu, J. , Kruskopf, M. , Yang, Y. , Wu, B. , Tian, J. , Panna, A. , Rigosi, A. , Lee, H. , Jones, G. , Kraft, M. , Jarrett, D. , Watanabe, K. , Taniguchi, T. , Elmquist, R. and Newell, D. (2018), Epitaxial Graphene p-n Junctions, CPEM 2018 Conference Digest, Paris, -1, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=925113 (Accessed May 25, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created July 9, 2018, Updated July 25, 2019