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Epitaxial Graphene p-n Junctions



Jiuning Hu, Mattias Kruskopf, Yanfei Yang, Bi Y. Wu, Jifa Tian, Alireza R. Panna, Albert F. Rigosi, Hsin Y. Lee, George R. Jones Jr., Marlin E. Kraft, Dean G. Jarrett, Kenji Watanabe, Takashi Taniguchi, Randolph E. Elmquist, David B. Newell


We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexgonal boron nitride (hBN) is used as the gate dielectric. The four terminal longitudinal resistance across a single junction is well quantized at R_{K-90} with a relative uncertainty of 10^{-7}. Our work opens the possibility to realize programmable electrical resistance standards using external gating.
Proceedings Title
CPEM 2018 Conference Digest
Conference Dates
July 8-13, 2018
Conference Location
Conference Title
CPEM 2018


Epitaxial graphene, graphene p-n junction, quantum Hall effect, resistance standard


Hu, J. , Kruskopf, M. , Yang, Y. , Wu, B. , Tian, J. , Panna, A. , Rigosi, A. , Lee, H. , Jones, G. , Kraft, M. , Jarrett, D. , Watanabe, K. , Taniguchi, T. , Elmquist, R. and Newell, D. (2018), Epitaxial Graphene p-n Junctions, CPEM 2018 Conference Digest, Paris, -1, [online], (Accessed May 25, 2024)


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Created July 9, 2018, Updated July 25, 2019