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Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices



Yanfei Yang, Guangjun Cheng, Chiashain Chuang, Angela R. Hight Walker, Randolph E. Elmquist, Irene G. Calizo, Randall M. Feenstra, Patrick Mende


Quantized magnetotransport is observed in 5.6 × 5.6 mm2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 °C). The precise quantized Hall resistance of Rxy = h/〖2e〗^2 is maintained up to record level of critical current Ixx = 0.72 mA at T = 3.1 K and 9 T in a device where Raman microscopy reveals low and homogeneous strain. Adsorption-induced molecular doping in a second device reduced the carrier concentration close to the Dirac point (n ≈ 1010 cm−2), where mobility of 18760 cm2/Vs is measured over an area of 10 mm2. Atomic force, confocal optical, and Raman microscopies are used to characterize the large-scale devices, and reveal improved SiC terrace topography and the structure of the graphene layer. Our results show that the structural uniformity of epitaxial graphene produced by face-to-graphite processing contributes to millimeter-scale transport homogeneity, and will prove useful for scientific and commercial applications.


graphene, quantum Hall effect, resistance metrology, dissipation, homogeneity, Raman


Yang, Y. , Cheng, G. , Chuang, C. , Hight, A. , Elmquist, R. , Calizo, I. , Feenstra, R. and Mende, P. (2017), Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices, Carbon, [online], (Accessed April 13, 2024)
Created April 1, 2017, Updated June 2, 2017