Electrical stabilization of surface resistivity in epitaxial graphene systems by amorphous boron nitride encapsulation

Published

May 25, 2017

Author(s)

Albert F. Rigosi, Chieh-I Liu, Nicholas R. Glavin, Yanfei Yang, Heather M. Hill, Jiuning Hu, Angela R. Hight Walker, Curt A. Richter, Randolph E. Elmquist, David B. Newell

Abstract

Homogeneous monolayer epitaxial graphene (EG) is an ideal candidate for the development of millimeter-sized devices with single-crystal domains. A clean fabrication process was used to produce EG-based devices with n-type doping level of order 10^12 cm^-2. Generally, electrical properties of EG, such as longitudinal resistivity, remain unstable when devices are exposed to air due to adsorption of molecular dopants, whose presence shifts the carrier density close to the Dirac point (

Citation

ACS Ω

Pub Type

Journals

Download Paper

https://doi.org/10.1021/acsomega.7b00341

Keywords

epitaxial graphene, transport mobility, longitudinal resistivity, amorphous Boron Nitride (a- BN), pulsed laser deposition (PLD), carrier density

Citation

Rigosi, A. , Liu, C. , Glavin, N. , Yang, Y. , Hill, H. , Hu, J. , Hight, A. , Richter, C. , Elmquist, R. and Newell, D. (2017), Electrical stabilization of surface resistivity in epitaxial graphene systems by amorphous boron nitride encapsulation, ACS Ω, [online], https://doi.org/10.1021/acsomega.7b00341 (Accessed October 13, 2025)