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Electrical stabilization of surface resistivity in epitaxial graphene systems by amorphous boron nitride encapsulation
Published
Author(s)
Albert F. Rigosi, Chieh-I Liu, Nicholas R. Glavin, Yanfei Yang, Heather M. Hill, Jiuning Hu, Angela R. Hight Walker, Curt A. Richter, Randolph E. Elmquist, David B. Newell
Abstract
Homogeneous monolayer epitaxial graphene (EG) is an ideal candidate for the development of millimeter-sized devices with single-crystal domains. A clean fabrication process was used to produce EG-based devices with n-type doping level of order 10^12 cm^-2. Generally, electrical properties of EG, such as longitudinal resistivity, remain unstable when devices are exposed to air due to adsorption of molecular dopants, whose presence shifts the carrier density close to the Dirac point (
Rigosi, A.
, Liu, C.
, Glavin, N.
, Yang, Y.
, Hill, H.
, Hu, J.
, Hight, A.
, Richter, C.
, Elmquist, R.
and Newell, D.
(2017),
Electrical stabilization of surface resistivity in epitaxial graphene systems by amorphous boron nitride encapsulation, ACS Ω, [online], https://doi.org/10.1021/acsomega.7b00341
(Accessed October 8, 2025)