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Transport of NIST Graphene Quantized Hall Devices and Comparison with AIST Gallium-Arsenide Quantized Hall Devices

Published

Author(s)

Dean G. Jarrett, Takehiko Oe, Randolph E. Elmquist, Nobu Kaneko, Albert F. Rigosi, Bi Y. Wu, Hsin Y. Lee, Yanfei Yang

Abstract

We report the results of a pilot study where two graphene quantized Hall resistance (QHR) devices made at the National Institute of Standards and Technology (NIST) were hand carried from the USA to the National Institute for Advanced Industrial Science and Technology (AIST) in Japan in a container filled with inert gas and compared to a gallium arsenide QHR device as well as a 100 Ω standard resistor. Initial measurements of the 100 Ω resistor with the graphene QHR devices agreed within 5 x 10-9 of the 100 Ω resistor gallium arsenide measurements. After initial measurements at AIST, the carrier density of the devices was adjusted on-site to restore the device performance at low magnetic fields of 4 T to 6 T.
Proceedings Title
CPEM 2018 Conference Digest
Conference Dates
July 8-13, 2018
Conference Location
Paris
Conference Title
Conference on Precision Electromagnetic Measurements (CPEM) 2018

Keywords

quantized Hall resistance, graphene, cryogenic current comparator, standard resistor, carrier density

Citation

Jarrett, D. , Oe, T. , Elmquist, R. , Kaneko, N. , Rigosi, A. , Wu, B. , Lee, H. and Yang, Y. (2018), Transport of NIST Graphene Quantized Hall Devices and Comparison with AIST Gallium-Arsenide Quantized Hall Devices, CPEM 2018 Conference Digest, Paris, -1, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=925106 (Accessed April 15, 2024)
Created July 9, 2018, Updated July 25, 2019