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Search Publications by: Yanfei Yang (Fed)

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Displaying 26 - 33 of 33

Temperature dependence of electron density and electron-electron interactions in monolayer epitaxial graphene grown on SiC

January 25, 2017
Author(s)
Chieh W. Liu, Chiashain Chuang, Yanfei Yang, Randolph Elmquist, Yi-Ju Ho, Hsin Y. Lee, Chi-Te Liang
We report carrier density measurements and electron-electron (e-e) interactions in monolayer epitaxial graphene grown on SiC. The temperature (T)-independent carrier density determined from the Shubnikov-de Haas (SdH) oscillations clearly demonstrates that

Insulator-quantum Hall transition in monolayer epitaxial graphene

July 22, 2016
Author(s)
Lung-I Huang, Yanfei Yang, Randolph Elmquist, Shun-Tsung Lo, Fan-Hung H. Liu, Chi-Te Laing
We report on magneto-transport measurements on low-density, large-area monolayer epitaxial graphene devices grown on SiC. We observe temperature (T)-independent crossing points in the longitudinal resistivity (rho)sub(xx), which are signatures of the

Surface conductance of graphene from non-contact resonant cavity

March 15, 2016
Author(s)
Jan Obrzut, Caglar Dogu Emiroglu, Oleg A. Kirillov, Yanfei Yang, Randolph E. Elmquist
A method is established to reliably determine surface conductance of single-layer or multi-layer atomically thin nano-carbon graphene structures. These can be synthesized by chemical vapor deposition (CVD), epitaxial growth on silicon carbide (SiC)

Quantized Hall resistance in large-scale monolayer graphene

November 28, 2015
Author(s)
Yanfei Yang, Chiashain Chuang, Chieh W. Liu, Randolph Elmquist
Abstract: Graphene is an atomic-thickness carbon lattice that can be exfoliated from solid graphite or grown using high temperature processing methods on a variety of substrates. Many practical applications of large-area graphene, however, are limited by

Development of Low Carrier Density Graphene Devices

August 1, 2014
Author(s)
Yanfei Yang, Lung-I Huang, David B. Newell, Yasuhiro Fukuyama, Mariano A. Real, Randolph Elmquist
Epitaxial graphene on SiC(0001) is used to fabricate Hall bar structures for metrological applications with a fabrication process that has been developed to eliminate organic chemical contamination of the graphene. Before any lithographic patterning a

Low carrier density epitaxial graphene devices on SiC

June 1, 2014
Author(s)
Yanfei Yang, Lung-I Huang, Yasuhiro Fukuyama, Fan-Hung Liu, Mariano Real, Paola Barbara, Chi-Te Liang, David B. Newell, Randolph Elmquist
Monolayer epitaxial graphene grown on a hexagonal silicon carbide (SiC) substrate is typically found to be heavily n-doped (10e13 cm-2) and in most devices made with the as-grown epitaxial graphene the quantized Hall resistance plateau with Landau level

Localization and electron-electron interactions in few-layer epitaxial graphene

May 28, 2014
Author(s)
Randolph E. Elmquist, Fan-Hung Liu, Lung-I Huang, Yasuhiro Fukuyama, Chi-Te Liang, Yanfei Yang
We study the quantum corrections caused by electron-electron (e-e) interactions and localization to the conductivity in few-layer epitaxial graphene, in which the carriers responsible for transport are massive. Our results demonstrate that the diffusive
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