Development of Low Carrier Density Graphene Devices
Yanfei Yang, Lung-I Huang, David B. Newell, Yasuhiro Fukuyama, Mariano A. Real, Randolph Elmquist
Epitaxial graphene on SiC(0001) is used to fabricate Hall bar structures for metrological applications with a fabrication process that has been developed to eliminate organic chemical contamination of the graphene. Before any lithographic patterning a metal protection layer of 15 nm thickness is deposited on as-grown graphene. The protection layer on top of the Hall-bar area is etched by diluted fresh aqua regia at the last step of the fabrication, therefore avoiding any contamination from photoresist or photoresist remover. Results including low carrier density and high mobility are reported, along with the appearance of well-developed quantized Hall resistance plateaus for filling factor nu=2 at magnetic fields as low as 2 T.
CPEM 2014 Conference Digest
August 24-29, 2014
Rio de Janeiro, BR
Conference on Precision Electromagnetic Measurements 2014
Epitaxial graphene, device fabrication, quantum Hall effect, carrier density
, Huang, L.
, Newell, D.
, Fukuyama, Y.
, Real, M.
and Elmquist, R.
Development of Low Carrier Density Graphene Devices, CPEM 2014 Conference Digest, Rio de Janeiro, BR
(Accessed June 1, 2023)