Development of Low Carrier Density Graphene Devices

Published

August 1, 2014

Author(s)

Yanfei Yang, Lung-I Huang, David B. Newell, Yasuhiro Fukuyama, Mariano A. Real, Randolph Elmquist

Abstract

Epitaxial graphene on SiC(0001) is used to fabricate Hall bar structures for metrological applications with a fabrication process that has been developed to eliminate organic chemical contamination of the graphene. Before any lithographic patterning a metal protection layer of 15 nm thickness is deposited on as-grown graphene. The protection layer on top of the Hall-bar area is etched by diluted fresh aqua regia at the last step of the fabrication, therefore avoiding any contamination from photoresist or photoresist remover. Results including low carrier density and high mobility are reported, along with the appearance of well-developed quantized Hall resistance plateaus for filling factor nu=2 at magnetic fields as low as 2 T.

Proceedings Title

CPEM 2014 Conference Digest

Conference Dates

August 24-29, 2014

Conference Location

Rio de Janeiro, BR

Conference Title

Conference on Precision Electromagnetic Measurements 2014

Pub Type

Conferences

Keywords

Epitaxial graphene, device fabrication, quantum Hall effect, carrier density

Citation

Yang, Y. , Huang, L. , Newell, D. , Fukuyama, Y. , Real, M. and Elmquist, R. (2014), Development of Low Carrier Density Graphene Devices, CPEM 2014 Conference Digest, Rio de Janeiro, BR (Accessed October 22, 2025)