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Quantized Hall resistance in large-scale monolayer graphene

Published

Author(s)

Yanfei Yang, Chiashain Chuang, Chieh W. Liu, Randolph Elmquist

Abstract

Abstract: Graphene is an atomic-thickness carbon lattice that can be exfoliated from solid graphite or grown using high temperature processing methods on a variety of substrates. Many practical applications of large-area graphene, however, are limited by the transport mobility and carrier concentration homogeneity over distances greater than hundreds of microns. This presentation reports on the characteristics of large area (25 mm2) monolayer devices that display precise quantum Hall effect (QHE) characteristics at reasonable cryogenic temperatures, surpassing the previously reported records for graphene.
Conference Dates
November 29-December 4, 2015
Conference Location
Bento Gonçalves, BR
Conference Title
Brazilian Congress on Metrology, 2015

Keywords

quantum Hall effect, graphene, electronic mobility, resistance standard

Citation

Yang, Y. , Chuang, C. , Liu, C. and Elmquist, R. (2015), Quantized Hall resistance in large-scale monolayer graphene, Brazilian Congress on Metrology, 2015, Bento Gonçalves, BR, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=919094 (Accessed February 25, 2024)
Created November 28, 2015, Updated April 5, 2022