Localization and electron-electron interactions in few-layer epitaxial graphene

Published

May 28, 2014

Author(s)

Randolph E. Elmquist, Fan-Hung Liu, Lung-I Huang, Yasuhiro Fukuyama, Chi-Te Liang, Yanfei Yang

Abstract

We study the quantum corrections caused by electron-electron (e-e) interactions and localization to the conductivity in few-layer epitaxial graphene, in which the carriers responsible for transport are massive. Our results demonstrate that the diffusive model, which can generally provide good insights into the magnetotransport of two-dimensional systems in conventional semiconductor structures, is applicable to few-layer epitaxial graphene when the unique properties of graphene on the substrate such as intervalley scattering are taken into account. We suggest that magnetic-field-dependent e-e interactions and Kondo physics are required for obtaining a thorough understanding of magneto-transport in few-layer epitaxial graphene.

Citation

Nanotechnology

Pub Type

Journals

Keywords

quantum effects, electron-electron interaction, magnetoconductance, graphene

Citation

Elmquist, R. , Liu, F. , Huang, L. , Fukuyama, Y. , Liang, C. and Yang, Y. (2014), Localization and electron-electron interactions in few-layer epitaxial graphene, Nanotechnology (Accessed October 20, 2025)