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Localization and electron-electron interactions in few-layer epitaxial graphene
Published
Author(s)
Randolph E. Elmquist, Fan-Hung Liu, Lung-I Huang, Yasuhiro Fukuyama, Chi-Te Liang, Yanfei Yang
Abstract
We study the quantum corrections caused by electron-electron (e-e) interactions and localization to the conductivity in few-layer epitaxial graphene, in which the carriers responsible for transport are massive. Our results demonstrate that the diffusive model, which can generally provide good insights into the magnetotransport of two-dimensional systems in conventional semiconductor structures, is applicable to few-layer epitaxial graphene when the unique properties of graphene on the substrate such as intervalley scattering are taken into account. We suggest that magnetic-field-dependent e-e interactions and Kondo physics are required for obtaining a thorough understanding of magneto-transport in few-layer epitaxial graphene.
Elmquist, R.
, Liu, F.
, Huang, L.
, Fukuyama, Y.
, Liang, C.
and Yang, Y.
(2014),
Localization and electron-electron interactions in few-layer epitaxial graphene, Nanotechnology
(Accessed June 7, 2023)