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Temperature dependence of electron density and electron-electron interactions in monolayer epitaxial graphene grown on SiC

Published

Author(s)

Chieh W. Liu, Chiashain Chuang, Yanfei Yang, Randolph Elmquist, Yi-Ju Ho, Hsin Y. Lee, Chi-Te Liang

Abstract

We report carrier density measurements and electron-electron (e-e) interactions in monolayer epitaxial graphene grown on SiC. The temperature (T)-independent carrier density determined from the Shubnikov-de Haas (SdH) oscillations clearly demonstrates that the observed logarithmic temperature dependence of Hall slope in our system must be due to e-e interactions. Since the electron density determined from conventional SdH measurements does not depend on e-e interactions based on Kohn's theorem, SdH experiments appear to be more reliable compared with the classical Hall effect when one studies the T dependence of the carrier density in the low T regime. On the other hand, the logarithmic T dependence of the Hall slope (delta)Rxy/(delta)B can be used to probe e-e interactions even when the conventional conductivity method is not applicable due to strong electron-phonon scattering.
Citation
2D Materials
Volume
4

Keywords

electron density, electron-electron interactions, Hall slope, Shubnikov-de-Haas oscillations

Citation

Liu, C. , Chuang, C. , Yang, Y. , Elmquist, R. , Ho, Y. , Lee, H. and Liang, C. (2017), Temperature dependence of electron density and electron-electron interactions in monolayer epitaxial graphene grown on SiC, 2D Materials, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=922428 (Accessed May 27, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created January 24, 2017, Updated October 12, 2021