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Temperature dependence of electron density and electron-electron interactions in monolayer epitaxial graphene grown on SiC
Published
Author(s)
Chieh W. Liu, Chiashain Chuang, Yanfei Yang, Randolph Elmquist, Yi-Ju Ho, Hsin Y. Lee, Chi-Te Liang
Abstract
We report carrier density measurements and electron-electron (e-e) interactions in monolayer epitaxial graphene grown on SiC. The temperature (T)-independent carrier density determined from the Shubnikov-de Haas (SdH) oscillations clearly demonstrates that the observed logarithmic temperature dependence of Hall slope in our system must be due to e-e interactions. Since the electron density determined from conventional SdH measurements does not depend on e-e interactions based on Kohn's theorem, SdH experiments appear to be more reliable compared with the classical Hall effect when one studies the T dependence of the carrier density in the low T regime. On the other hand, the logarithmic T dependence of the Hall slope (delta)Rxy/(delta)B can be used to probe e-e interactions even when the conventional conductivity method is not applicable due to strong electron-phonon scattering.
Liu, C.
, Chuang, C.
, Yang, Y.
, Elmquist, R.
, Ho, Y.
, Lee, H.
and Liang, C.
(2017),
Temperature dependence of electron density and electron-electron interactions in monolayer epitaxial graphene grown on SiC, 2D Materials, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=922428
(Accessed October 8, 2025)