Hot carriers in epitaxial graphene sheets with and without hydrogen intercalation: role of substrate coupling

Published

July 1, 2014

Author(s)

Randolph E. Elmquist, Chiashain Chuang, Yanfei Yang, Lung-I Huang, Chi-Te Liang

Abstract

The development of graphene electronic devices produced by industry will rely on efficient control of heat transfer from the graphene sheet to its environment. In nanoscale devices, heat is one of the major obstacles to the operation of such devices at high frequencies. Here we study transport of hot carriers in epitaxial graphene sheets on 6H-SiC (0001) substrates with and without hydrogen intercalation by driving the device into the non-equilibrium regime. Interestingly, we demonstrate that the energy relaxation time of the device without hydrogen intercalation is two orders of magnitude shorter than that with hydrogen intercalation, suggesting applications of epitaxial graphene in high-frequency devices which require outstanding heat exchange with the outside cooling source.

Citation

Nanoscale

Volume

6

Issue

DOI: 10.1039/c4nr02980a

Pub Type

Journals

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Keywords

graphene, epitaxial graphene, current heating, hydrogen intercalation, hot carriers

Citation

Elmquist, R. , Chuang, C. , Yang, Y. , Huang, L. and Liang, C. (2014), Hot carriers in epitaxial graphene sheets with and without hydrogen intercalation: role of substrate coupling, Nanoscale, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=916191 (Accessed October 8, 2025)