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Search Publications by: Richard Mirin (Fed)

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Displaying 176 - 200 of 220

GaAs Buffer Layer Morphology and Lateral Distributions of InGaAs Quantum Dots

May 1, 2005
Author(s)
Alexana Roshko, Todd E. Harvey, Susan Y. Lehman, Richard Mirin, Kristine A. Bertness, Brittany Hyland
Atomic force microscopy was used to study the morphology of GaAs buffer layers and the density and height distributions of self-assembled InGaAs quantum dots (QDs) grown on these buffers by molecular beam epitaxy. The surface roughness and terrace size of

Carrier Dynamics and Homogeneous Broadening in Quantum Dot Waveguides

January 1, 2005
Author(s)
Kevin L. Silverman, Richard P. Mirin, Steven T. Cundiff, Benjamin Klein,
Coupling between InGaAs/GaAs quantum dots is investigated using differential transmission spectroscopy. Degenerate measurements show an initial carrier relaxation time that is relatively independent of carrier density. Two-color pump-probe techniques are

Single photon sources based on single quantum dots

August 8, 2004
Author(s)
Richard P. Mirin
We describe temperature-dependent photon antibunching measurements from single InGaAs/GaAs quantum dots. The second order intensity correlation demonstrates single emitter emission up to 120 K and nonclassical light emission to 135 K.

Cavity ring-down spectroscopy of semiconductor quantum dots

May 16, 2004
Author(s)
Joseph J. Berry, Todd E. Harvey, Richard Mirin, A Marian, Jun Ye
We employ cavity ringdown to perform absorption experiments of InGaAs/GaAs QDs. Integrating an AlAs/GaAs DBR incorporating InGaAs QD?s into a Fabry-Perot cavity, we demonstrate this approach and its potentials for sensitive measurements on semiconductor

Photoluminescence from an Nd3+ doped AlGaAs semiconductor structure

May 16, 2004
Author(s)
Kirk Ullmann, Mark Su, Kevin L. Silverman, Joseph J. Berry, Todd E. Harvey, Richard Mirin
We report room temperature photoluminescence from a Nd3+ doped AlGaAs semiconductor. Oxidation of the AlGaAs greatly improves the luminescence efficiency of the Nd3+ ions.

Temperature-dependent, single quantum dot single photon statistics

May 16, 2004
Author(s)
Richard P. Mirin
We describe temperature-dependent photon antibunching measurements from single InGaAs/GaAs quantum dots. The second order intensity correlation demonstrates single emitter emission up to 120 K and nonclassical light emission to 135 K.

Single-electron transistor spectroscopy of InGaAs self-assembled quantum dots

March 1, 2004
Author(s)
Kevin Osborn, Mark W. Keller, Richard Mirin
A single-electron transistor (SET) is used to detect tunneling of single electrons into individual InGaAs self-assembled quantum dots (QDs). By using an SET with a small island area and growing QDs with a low density we are able to distinguish and measure

Single-Electron Transistor Spectroscopy of InGaAs Self-Assembled Quantum Dots

January 1, 2004
Author(s)
Kevin Osborn, Mark W. Keller, Richard Mirin
A single-electron transistor is used to detect tunneling of single electrons into self-assembled InGaAs quantum dots. Aluminum single-electron transistors (SETs) are fabricated over an MBE-grown structure containing quantum dots (QDs) and an underlying n

Passively Mode-locked Glass Waveguide Laser with 14 fs Timing Jitter

December 1, 2003
Author(s)
John B. Schlager, Berton Callicoatt, Richard Mirin, Norman Sanford, David J. Jones, Jun Ye
Ultra-low jitter pulse trains are produced from a passively mode-locked erbium/ytterbium co-doped planar waveguide laser using high-bandwidth feedback control acting on the physical cavity length and optical pump power. Synchronization of a 750 MHz

Compact Solid-State Waveguide Lasers

September 1, 2003
Author(s)
Berton Callicoatt, John B. Schlager, Robert K. Hickernell, Richard Mirin, Norman Sanford
DBR and mode-locked Er/Yb waveguide lasers offer single-frequency and ultralow jitter performance.

Investigation of the Shape of InGaAs/GaAs Quantum Dots

January 1, 2003
Author(s)
Susan Y. Lehman, Alexana Roshko, Richard Mirin, John E. Bonevich
Three samples of self-assembled In 0.44Ga 0.56As quantum dots (QDs) grown on (001) GaAs by molecular beam epitaxy (MBE) were studied using atomic force microscopy (AFM)) and high-resolution transmission electron microscopy (TEM) in order to characterize

Mode-Locked and Single-Frequency Er/Yb Co-Doped Waveguide Lasers

January 1, 2003
Author(s)
John B. Schlager, Berton Callicoatt, Richard Mirin, Norman Sanford
Erbium/ytterbium co-doped planar waveguide lasers are fabricated for low-jitter mode-locked operation and single-frequency operation at 1.54 υm. The passively mode-locked lasers produce picosecond pulses at fundamental repetition rates up to 1 GHz with

Bimodal Size Distribution of Self-Assembled InGaAs Quantum Dots

September 23, 2002
Author(s)
Solveig Anders, C. S. Kim, Benjamin D. Klein, Mark W. Keller, Richard Mirin
We investigate energy level quantization in self-assembled InGaAs quantum dots that are embedded In a GaAs matrix. We use capacitance and photoluminescence spectroscopy to analyze the evolution of the energy levels with varying amounts of deposited InGaAs

Passively Mode-Locked Waveguide Laser with Low Residual Jitter

September 1, 2002
Author(s)
John B. Schlager, Berton Callicoatt, Richard Mirin, Norman Sanford
Picosecond pulses at 1.53 υm with low residual jitter are generated from a passively mode-locked erbium/ytterbium co-doped planar waveguide laser in an extended cavity configuration. The round-trip frequency of the laser cavity is actively referenced to

Formation of InAs/GaAs quantum dots by dewetting during cooling

July 1, 2002
Author(s)
Richard P. Mirin, Alexana Roshko, M. van der Puijl, Andrew G. Norman
We describe a method to form InAs quantum dots on GaAs by cooling an InAs film that is deposited at high substrate temperatures. The reflection high-energy electron diffraction pattern taken after deposition of 1.9 monolayers of InAs on (100) GaAs at 540

High-Speed, High-Efficiency. Large-Area Resonant Cavity Enhanced p-i-n Photodiodes for Multimode Fiber Communications

December 1, 2001
Author(s)
M. Gvkkavas, O. Dosunmu, M. S. {Umlat}nl{umlat}, G. Ulu, Richard Mirin, David H. Christensen, E. Vzbay
In this letter, we report AlGaAs-GaAs p-i-n photodiodes with a 3-dB bandwidth in excess of 10 GHz for devices as large as 60-υm diameter. Resonant cavity enhanced photodetection is employed to improve quantum efficiency, resulting in more than 90% peak

Mode-Locked Erbium/Ytterbium Co-Doped Waveguide Laser

May 1, 2001
Author(s)
John B. Schlager, Berton Callicoatt, Kevin L. Silverman, Richard Mirin, Norman Sanford, D. L. Veasey
Picosecond pulses are generated from a passively mode-locked ER3+/Yb3+ co-doped planar waveguide laser in an extended cavity configuration with a semiconductor saturable absorber mode locker. Average output power exceeds 8 mW and is expected to increase
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