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PUBLICATIONS

Transport properties of a quantum dot based optically gated field-effect transistor

Published

Author(s)

Mary A. Rowe, Mark Su, Richard Mirin

Abstract

We demonstrate an optically modulated field-effect transistor. Such a device has a possible application as a fast, flexible, and efficient single photon detector.
Proceedings Title
Tech. Dig., Conf. on Lasers and Electro-Optics (CLEO)
Conference Dates
May 16-21, 2004
Conference Location
San Francisco, CA, USA
Pub Type
Conferences

Download Paper

Local Download

Keywords

field effect transistor, quantum dots

Citation

Rowe, M. , Su, M. and Mirin, R. (2004), Transport properties of a quantum dot based optically gated field-effect transistor, Tech. Dig., Conf. on Lasers and Electro-Optics (CLEO), San Francisco, CA, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31557 (Accessed October 25, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created May 15, 2004, Updated October 12, 2021
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