Osborn, K.
, Keller, M.
and Mirin, R.
(2004),
Single-electron transistor spectroscopy of InGaAs self-assembled quantum dots, Physica E-Low-Dimensional Systems & Nanostructures, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31787
(Accessed October 11, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Single-electron transistor spectroscopy of InGaAs self-assembled quantum dots
Published
Author(s)
, ,
Abstract
A single-electron transistor (SET) is used to detect tunneling of single electrons into individual InGaAs self-assembled quantum dots (QDs). By using an SET with a small island area and growing QDs with a low density we are able to distinguish and measure three QDs. The bias voltage at which resonant tunneling into the dots occurs can be shifted using a surface gate electrode. From the applied voltages at which we observe electrons tunneling, we are able to measure the electron addition energies of three QDs.Citation
Physica E-Low-Dimensional Systems & Nanostructures
Volume
21
Pub Type
Journals
Download Paper
Keywords
InGaAs, quantum dot, self-assembled, single-electron transistor
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created February 29, 2004, Updated October 12, 2021