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Single-electron transistor spectroscopy of InGaAs self-assembled quantum dots

Published

Author(s)

Kevin Osborn, Mark W. Keller, Richard Mirin

Abstract

A single-electron transistor (SET) is used to detect tunneling of single electrons into individual InGaAs self-assembled quantum dots (QDs). By using an SET with a small island area and growing QDs with a low density we are able to distinguish and measure three QDs. The bias voltage at which resonant tunneling into the dots occurs can be shifted using a surface gate electrode. From the applied voltages at which we observe electrons tunneling, we are able to measure the electron addition energies of three QDs.
Citation
Physica E-Low-Dimensional Systems & Nanostructures
Volume
21

Keywords

InGaAs, quantum dot, self-assembled, single-electron transistor

Citation

Osborn, K. , Keller, M. and Mirin, R. (2004), Single-electron transistor spectroscopy of InGaAs self-assembled quantum dots, Physica E-Low-Dimensional Systems & Nanostructures, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31787 (Accessed April 19, 2024)
Created February 29, 2004, Updated October 12, 2021