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Photoluminescence from an Nd3+ doped AlGaAs semiconductor structure

Published

Author(s)

Kirk Ullmann, Mark Su, Kevin L. Silverman, Joseph J. Berry, Todd E. Harvey, Richard Mirin

Abstract

We report room temperature photoluminescence from a Nd3+ doped AlGaAs semiconductor. Oxidation of the AlGaAs greatly improves the luminescence efficiency of the Nd3+ ions.
Proceedings Title
Tech. Dig., Conf. on Lasers and Electro-Optics (CLEO)
Conference Dates
May 16-21, 2004
Conference Location
San Francisco, CA, USA

Citation

Ullmann, K. , Su, M. , Silverman, K. , Berry, J. , Harvey, T. and Mirin, R. (2004), Photoluminescence from an Nd3+ doped AlGaAs semiconductor structure, Tech. Dig., Conf. on Lasers and Electro-Optics (CLEO), San Francisco, CA, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31561 (Accessed May 29, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created May 15, 2004, Updated October 12, 2021