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Evolution of the Shapes of InAs and InGaAs Quantum Dots

Published

Author(s)

Richard P. Mirin, Alexana Roshko, M. van der Puijl, Andrew G. Norman

Abstract

The exact shape of self-assembled quantum dots is still a controversial subject in the literature, despite the fact that this knowledge is of paramount importance for modeling the energy levels and electron wavefunctions in the quantum dots. We will describe reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), and transmission electron microscopy (TEM) measurements on both InAs and InGaAs quantum dots growth on (100) GaAs substrates.
Proceedings Title
Proc., North Amer. Conf. on Molecular Beam Epitaxy
Conference Dates
October 1-3, 2001
Conference Location
Providence, RI

Keywords

MBE, quantum dots, RHEED

Citation

Mirin, R. , Roshko, A. , van, M. and Norman, A. (2001), Evolution of the Shapes of InAs and InGaAs Quantum Dots, Proc., North Amer. Conf. on Molecular Beam Epitaxy, Providence, RI, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=30745 (Accessed July 22, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created January 1, 2001, Updated February 19, 2017