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Evolution of the Shapes of InAs and InGaAs Quantum Dots



Richard P. Mirin, Alexana Roshko, M. van der Puijl, Andrew G. Norman


The exact shape of self-assembled quantum dots is still a controversial subject in the literature, despite the fact that this knowledge is of paramount importance for modeling the energy levels and electron wavefunctions in the quantum dots. We will describe reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), and transmission electron microscopy (TEM) measurements on both InAs and InGaAs quantum dots growth on (100) GaAs substrates.
Proceedings Title
Proc., North Amer. Conf. on Molecular Beam Epitaxy
Conference Dates
October 1-3, 2001
Conference Location
Providence, RI


MBE, quantum dots, RHEED


Mirin, R. , Roshko, A. , van, M. and Norman, A. (2001), Evolution of the Shapes of InAs and InGaAs Quantum Dots, Proc., North Amer. Conf. on Molecular Beam Epitaxy, Providence, RI, [online], (Accessed July 22, 2024)


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Created January 1, 2001, Updated February 19, 2017