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Search Publications by: Richard Mirin (Fed)

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Displaying 201 - 220 of 220

Evolution of the Shapes of InAs and InGaAs Quantum Dots

January 1, 2001
Author(s)
Richard P. Mirin, Alexana Roshko, M. van der Puijl, Andrew G. Norman
The exact shape of self-assembled quantum dots is still a controversial subject in the literature, despite the fact that this knowledge is of paramount importance for modeling the energy levels and electron wavefunctions in the quantum dots. We will

Multimode Lasing at Room Temperature from InGaAs/GaAs Quantum Dot Lasers

January 1, 2001
Author(s)
Benjamin D. Klein, Kevin L. Silverman, Richard Mirin
We demonstrate InGaAs/GaAs quantuum dot lasers with multimode lasing at room temperature immediately above threshold. The lasing modes are separated by about ten times the Fabry-Perot mode spacing, with several dark modes in between the lasing modes. Rate

Single-frequency and Mode-locked Er/Yb Co-doped Waveguide Lasers

January 1, 2001
Author(s)
Berton Callicoatt, John B. Schlager, Kevin L. Silverman, Robert K. Hickernell, Richard P. Mirin, Norman A. Sanford, Joseph S. Hayden, Samuel D. Conzone, Robert D. Simpson
We present results for single-frequency and mode-locked Er/Yb co-doped waveguide lasers. The single-frequency DBR waveguide lasers have output power in excess of 80 mW with laser linewidth of 17 kHz. The passively mode-locked waveguide lasers produce

Quantum dot semiconductor optical amplifiers

July 1, 2000
Author(s)
Richard P. Mirin, D. J. Blumenthal
A new traveling-wave semiconductor optical amplifier using self-assembled quantum dots as the gain medium is proposed and analyzed. Cross-gain modulation is greatly reduced when the quantum dots are electronically uncoupled.

Compound semiconductor oxide antireflection coatings

May 15, 2000
Author(s)
K. J. Knopp, Richard Mirin, Kristine A. Bertness, Kevin L. Silverman, David H. Christensen
We report the development of high quality, broad-bandwidth, antireflection (AR) coatings using the low index provided by wet thermally oxidized Al 0.98Ga 0.02As. We address the design criteria, fabrication, and characterizations of AR coatings composed of

High-Speed Resonant Cavity Enhanced Photodiodes

December 1, 1999
Author(s)
M. S. {Umlat}nl{umlat}, E. Vzbay, E. Towe, Richard Mirin, David H. Christensen
We have demonstrated RCE Schottky phodiodes with GaAs absorption regions in AlGaAs/AlAs microcavities (3).

High-speed > 90 % quantum-efficiency p-i-n photodiodes with a resonance wavelength adjustable in the 795-835 range

February 22, 1999
Author(s)
E. Vzbay, I. Kimukin, N. Biyikli, O. Ayt|r, M. Gvkkavas, G. Ulu, M. S. {Umlat}nl{umlat}, Richard Mirin, Kristine A. Bertness, David H. Christensen
We report GaAs/AlGaAs-based high-speed, high-efficiency, resonant cavity enhanced p-i-n photodiodes. The devices were fabricated by using a microwave-compatible fabrication process. By using a postprocess recess etch, we tuned the resonance wavelength from

Ultrafast photodetectors with near-unity quantum efficiency

January 1, 1999
Author(s)
G. Ulu, M. Gvkkavas, M. S. {Umlat}nl{umlat}, N. Biyikli, E. {Omlat}zbay, Richard Mirin, David H. Christensen
We designed, fabricated and characterized Al xGa 1-xAs/GaAs p-i-n resonant cavity enhanced (RCE) photodetectors with near-unit quantum efficiency. The peak wavelength is in the 780-830 nm region and post-process adjustable by recessing the top surface

Optical constants of (Al 0.98 Ga 0.02 ) x O y native oxides

December 14, 1998
Author(s)
K. J. Knopp, Richard Mirin, David H. Christensen, Kristine A. Bertness, Alexana Roshko, R A. Synowicki
We report the optical constants of oxidized crystalline and low-temperature-grown (LTG) Al 0.98Ga 0.02As films, as determined by variable angle spectroscopic ellipsometry. Data were acquired at three angles of incidence over 240-1700nm and fit to a Cauchy

High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800-850 nm wavelength operation

May 25, 1998
Author(s)
M. S. {Umlat}nl{umlat}, M. Gvkkavas, B. M. Onat, E. Ata, E. Vzbay, Richard Mirin, K. J. Knopp, Kristine A. Bertness, David H. Christensen
High-speed resonant cavity enhanced Schottky photodiodes operating in 800-850 nm wavelength region are demonstrated. The devices are fabricated in the AlGaAs/GaAs mate1ial system. The Schottky contact is a semitransparent Au film which also serves as the
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