High-speed >90 % quantum-efficiency p-i-n photodiodes with a resonance wavelength adjustable in the 795-835 range

Published

February 22, 1999

Author(s)

E. Vzbay, I. Kimukin, N. Biyikli, O. Ayt|r, M. Gvkkavas, G. Ulu, M. S. {Umlat}nl{umlat}, Richard Mirin, Kristine A. Bertness, David H. Christensen

Abstract

We report GaAs/AlGaAs-based high-speed, high-efficiency, resonant cavity enhanced p-i-n photodiodes. The devices were fabricated by using a microwave-compatible fabrication process. By using a postprocess recess etch, we tuned the resonance wavelength from 835 to 795 nm while keeping the peak efficiencies above 90%. The maximum quantum efficiency was 92% at a resonance wavelength of 823 nm. The photodiode had an experimental setup-limited temporal response of 12 ps. When the system response is deconvolved, the 3 dB bandwidth corresponds to 50 GHz, which is in good agreement with our theoretical calculations.

Citation

Applied Physics Letters

Volume

74

Issue

8

Pub Type

Journals

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Citation

Vzbay, E. , Kimukin, I. , Biyikli, N. , Ayt|r, O. , Gvkkavas, M. , Ulu, G. , {Umlat}nl{umlat}, M. , Mirin, R. , Bertness, K. and Christensen, D. (1999), High-speed >90 % quantum-efficiency p-i-n photodiodes with a resonance wavelength adjustable in the 795-835 range, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=23150 (Accessed December 14, 2024)