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High bandwidth-efficiency RCE photodiodes operating at 800-850 nm wavelength

Published

Author(s)

M. S. {Umlat}nl{umlat}, G. Ulu, M. Gvkkavas, N. Biyikli, I. Kimukin, E. Vzbay, Richard Mirin, Kristine A. Bertness, David H. Christensen
Proceedings Title
Tech. Dig., OSA Ultrafast Electronics and Optoelectronics
Conference Dates
April 14-16, 1999
Conference Location
Aspen, CO

Keywords

high bindwidth, photodiodes, resonant-cavity

Citation

{Umlat}nl{umlat}, M. , Ulu, G. , Gvkkavas, M. , Biyikli, N. , Kimukin, I. , Vzbay, E. , Mirin, R. , Bertness, K. and Christensen, D. (1999), High bandwidth-efficiency RCE photodiodes operating at 800-850 nm wavelength, Tech. Dig., OSA Ultrafast Electronics and Optoelectronics, Aspen, CO, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=15200 (Accessed October 14, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created March 31, 1999, Updated October 12, 2021