Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Growth, characterization, and applications of self-assembled InGaAs quantum dots



Richard P. Mirin, A C. Gossard


Interest in quantum dots has reached new highs in recent years because of the ease of fabricating uniform arrays in situ via the transformation of a highly strained heteroepitaxial layer from a two-dimensional film to three-dimensional islands. These three-dimensional islands are defect-free and optically active, and the interfaces with the surrounding matrix are formed in situ and are extremely clean. Furthermore, these islands are small enough to laterally confine electrons and holes in discrete states, and thus these islands are referred to as quantum dots. InAs has a 7.2% lattice-mismatch to GaAs, and only abut 1.8 monolayers of InAs will grow in a two-dimensional manner on GaAs. Beyond this thickness, the film breaks apart into small, coherently-strained islands. Lateral quantum confinement has been observed in these InAs islands. Quantum dot lasers that use layers of InAs quantum dots have already demonstrated some of the predicted improvements in performance such as high characteristic temperatue and alrge differential gain.
Quantum Semiconductor Devices and Technologies
Publisher Info
Kluwer Academic Publishers, Norwell, MA


InGaAs, quantum dots, semiconductor lasers


Mirin, R. and Gossard, A. (2000), Growth, characterization, and applications of self-assembled InGaAs quantum dots, Kluwer Academic Publishers, Norwell, MA, [online], (Accessed June 12, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created October 1, 2000, Updated February 17, 2017