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Characterization of InGaAs quantum dot lasers with a single quantum dot layer as an active region

Published

Author(s)

Richard P. Mirin, A C. Gossard, J. E. Bowers

Abstract

Quantum dot lasers with an active region consisting of just a single quantum dot layer have been grown using molecular beam epitaxy and characterized from 80 to 300 K. The quantum dot lasers lase from excited states over the entire temperature range. The characteristic temperature is 185 = 10 K over the temperature range 30-141 K and decreases to 111 = 2 K from 141 - 304 K. The effects of scattering by the quantum dots has also been analyzed and shown to be unimportant in these quantum dot lasers.
Citation
Physica E-Low-Dimensional Systems & Nanostructures
Volume
2
Issue
1-4

Keywords

quantum dot lasers, Rayleigh scattering

Citation

Mirin, R. , Gossard, A. and Bowers, J. (1998), Characterization of InGaAs quantum dot lasers with a single quantum dot layer as an active region, Physica E-Low-Dimensional Systems & Nanostructures, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=12572 (Accessed July 15, 2024)

Issues

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Created July 4, 1998, Updated February 17, 2017