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Narrow photoluminescence linewidths from ensembles of self-assembled InGaAs quantum dots

Published

Author(s)

Richard P. Mirin, Kevin L. Silverman, David H. Christensen, Alexana Roshko

Abstract

Self-assembled InGaAs quantum dots have been grown using alternating molecular beams of In, Ga, and As2. The size distribution changes from bimodal to monodisperse as the quantum dots grow larger. Room-temperature photoluminescence experiments on ensembles of these quantum dots show that the emitted intensity remains high as the center wavelength changes from about 1130 to 1345 nm. The linewidths are less than 30 meV for all samples studied, with the narrowest measured linewidth being 18 meV at a peak emission energy of 930.1 meV (1333 nm).
Citation
Journal of Vacuum Science and Technology B
Volume
18
Issue
3

Keywords

AFM, MBE, photoluminescence, quantum dots

Citation

Mirin, R. , Silverman, K. , Christensen, D. and Roshko, A. (2000), Narrow photoluminescence linewidths from ensembles of self-assembled InGaAs quantum dots, Journal of Vacuum Science and Technology B, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=13672 (Accessed June 18, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created June 1, 2000, Updated January 27, 2020