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Ultrafast photodetectors with near-unity quantum efficiency

Published

Author(s)

G. Ulu, M. Gvkkavas, M. S. {Umlat}nl{umlat}, N. Biyikli, E. {Omlat}zbay, Richard Mirin, David H. Christensen

Abstract

We designed, fabricated and characterized AlxGa1-xAs/GaAs p-i-n resonant cavity enhanced (RCE) photodetectors with near-unit quantum efficiency. The peak wavelength is in the 780-830 nm region and post-process adjustable by recessing the top surface. Transit time limited bandwidth for these devices is in excess of 50 GHz. Possible applications of these detectors range from conventional measurements of low light levels and quantum optical experiments that use pulsed sources to short-haul high speed communications.
Proceedings Title
Proc., SPIE, Photodetectors, Materials and Devices IV
Volume
3629
Conference Dates
January 25-29, 1999
Conference Location
San Jose, CA, US

Keywords

near-unity, photodetector, quantum efficiency, resonant cavity-enhancement

Citation

Ulu, G. , Gvkkavas, M. , {Umlat}nl{umlat}, M. , Biyikli, N. , {Omlat}zbay, E. , Mirin, R. and Christensen, D. (1999), Ultrafast photodetectors with near-unity quantum efficiency, Proc., SPIE, Photodetectors, Materials and Devices IV, San Jose, CA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=30747 (Accessed June 16, 2024)

Issues

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Created December 31, 1998, Updated October 12, 2021