Ata, E.
, Gvkkavas, M.
, Onat, B.
, Islam, M.
, Tuttle, G.
, Mirin, R.
, Knopp, K.
, Bertness, K.
, Christensen, D.
, {Umlat}nl{umlat}, M.
and Vzbay, E.
(1997),
High bandwidth-efficiency GaAs Schottky photodiodes for 840 nm operation wavelength, Proc., 1997 Intl. Semiconductor Device Research Symp., Charlottesville, VA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=285
(Accessed October 21, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
High bandwidth-efficiency GaAs Schottky photodiodes for 840 nm operation wavelength
Published
Author(s)
E. Ata, M. Gvkkavas, B. M. Onat, M R. Islam, G. Tuttle, , K. J. Knopp, , , M. S. {Umlat}nl{umlat}, E. Vzbay
Proceedings Title
Proc., 1997 Intl. Semiconductor Device Research Symp.
Conference Dates
December 11-13, 1997
Conference Location
Charlottesville, VA, US
Pub Type
Conferences
Download Paper
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created November 30, 1997, Updated October 12, 2021