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High bandwidth-efficiency GaAs Schottky photodiodes for 840 nm operation wavelength

Published

Author(s)

E. Ata, M. Gvkkavas, B. M. Onat, M R. Islam, G. Tuttle, Richard Mirin, K. J. Knopp, Kristine A. Bertness, David H. Christensen, M. S. {Umlat}nl{umlat}, E. Vzbay
Proceedings Title
Proc., 1997 Intl. Semiconductor Device Research Symp.
Conference Dates
December 11-13, 1997
Conference Location
Charlottesville, VA, US

Citation

Ata, E. , Gvkkavas, M. , Onat, B. , Islam, M. , Tuttle, G. , Mirin, R. , Knopp, K. , Bertness, K. , Christensen, D. , {Umlat}nl{umlat}, M. and Vzbay, E. (1997), High bandwidth-efficiency GaAs Schottky photodiodes for 840 nm operation wavelength, Proc., 1997 Intl. Semiconductor Device Research Symp., Charlottesville, VA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=285 (Accessed July 14, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created November 30, 1997, Updated October 12, 2021