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High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800-850 nm wavelength operation

Published

Author(s)

M. S. {Umlat}nl{umlat}, M. Gvkkavas, B. M. Onat, E. Ata, E. Vzbay, Richard Mirin, K. J. Knopp, Kristine A. Bertness, David H. Christensen

Abstract

High-speed resonant cavity enhanced Schottky photodiodes operating in 800-850 nm wavelength region are demonstrated. The devices are fabricated in the AlGaAs/GaAs mate1ial system. The Schottky contact is a semitransparent Au film which also serves as the top reflector of the Fabry-Perot cavity. The detectors exhibit a peak quantum efficiency of Η=0.5 at λ=827 nm wavelength and a 3 dB bandwidth of more than 50 GHz resulting in a bandwidth-efficiency product of more than 25 GHz.
Citation
Applied Physics Letters
Volume
72
Issue
21

Citation

{Umlat}nl{umlat}, M. , Gvkkavas, M. , Onat, B. , Ata, E. , Vzbay, E. , Mirin, R. , Knopp, K. , Bertness, K. and Christensen, D. (1998), High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800-850 nm wavelength operation, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=20727 (Accessed May 21, 2024)

Issues

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Created May 24, 1998, Updated October 12, 2021