Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Photon antibunching at high temperature from a single InGaAs/GaAs quantum dot

Published

Author(s)

Richard P. Mirin

Abstract

We report the observation of photon antibunching from a single, self-assembled InGaAs/GaAs quantum dot at temperatures up to 135 K. The second order intensity correlation, g(2)(0), is measured to be less than 0.260 for temperatures up to 100 K. At 120 K, g(2)(0) increases to about 0.471, which is slightly less than the second-order intensity correlation expected from two independent single emitters. At 135 K, g(2)(0) is 0.667, which still indicates nonclassical light emission that is equivalent to having three independent single emitters.
Citation
Applied Physics Letters
Volume
84
Issue
8

Keywords

photon antibunching, quantum dots, quantum optics

Citation

Mirin, R. (2004), Photon antibunching at high temperature from a single InGaAs/GaAs quantum dot, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31482 (Accessed May 27, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created February 23, 2004, Updated February 19, 2017