NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Photon antibunching at high temperature from a single InGaAs/GaAs quantum dot
Published
Author(s)
Richard P. Mirin
Abstract
We report the observation of photon antibunching from a single, self-assembled InGaAs/GaAs quantum dot at temperatures up to 135 K. The second order intensity correlation, g(2)(0), is measured to be less than 0.260 for temperatures up to 100 K. At 120 K, g(2)(0) increases to about 0.471, which is slightly less than the second-order intensity correlation expected from two independent single emitters. At 135 K, g(2)(0) is 0.667, which still indicates nonclassical light emission that is equivalent to having three independent single emitters.
Mirin, R.
(2004),
Photon antibunching at high temperature from a single InGaAs/GaAs quantum dot, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31482
(Accessed October 20, 2025)