Mirin, R.
(2004),
Photon antibunching at high temperature from a single InGaAs/GaAs quantum dot, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31482
(Accessed April 26, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Photon antibunching at high temperature from a single InGaAs/GaAs quantum dot
Published
Author(s)
Abstract
We report the observation of photon antibunching from a single, self-assembled InGaAs/GaAs quantum dot at temperatures up to 135 K. The second order intensity correlation, g(2)(0), is measured to be less than 0.260 for temperatures up to 100 K. At 120 K, g(2)(0) increases to about 0.471, which is slightly less than the second-order intensity correlation expected from two independent single emitters. At 135 K, g(2)(0) is 0.667, which still indicates nonclassical light emission that is equivalent to having three independent single emitters.Citation
Applied Physics Letters
Volume
84
Issue
8
Pub Type
Journals
Download Paper
Keywords
photon antibunching, quantum dots, quantum optics
Citation
Created February 23, 2004, Updated February 19, 2017