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Carrier transfer between InGaAs/GaAs quantum dots observed by differential transmission spectroscopy

Published

Author(s)

Kevin L. Silverman, Richard Mirin, Steven T. Cundiff

Abstract

We observe carrier transfer between self-assembled InGaAs/GaAs quantum dots (QDs) at temperatures above 230 K using differential transmission spectroscopy (DTS). The sample is a single layer of QDs embedded in a semiconductor waveguide to increase the interaction length of the weakly absorbing QDs. Pump and probe light is generated by an optical parametric oscillator synchronously pumped by a mode-locked Ti:sapphire laser. The probe signal is isolated from the pump by high frequency modulation and detection with an RF lockin amplifier.
Proceedings Title
Proc., Colorado Meeting on Fundamental Optical Processes in Semiconductors
Conference Dates
August 8-13, 2004
Conference Location
Estes Park, CO, USA

Keywords

carrier transfer, differential transmission spectroscopy, quantum dots

Citation

Silverman, K. , Mirin, R. and Cundiff, S. (2004), Carrier transfer between InGaAs/GaAs quantum dots observed by differential transmission spectroscopy, Proc., Colorado Meeting on Fundamental Optical Processes in Semiconductors, Estes Park, CO, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31756 (Accessed July 17, 2024)

Issues

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Created August 7, 2004, Updated October 12, 2021