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Search Publications by: Richard Mirin (Fed)

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Displaying 151 - 175 of 217

Wavelength bistability in two-section mode-locked quantum-dot diode lasers

June 1, 2007
Author(s)
Mingming M. Feng, N. A. Brilliant, Steven T. Cundiff, Richard Mirin, Kevin L. Silverman
We report a two-section mode-locked quantum dot laser with an emission wavelength that is bistable with respect to applied bias on the saturable absorber region. The two stable lasing wavelengths for this device are 1173 nm and 1166 nm with a power

Photon-number-resolving capabilities of a semiconductor quantum dot, optically gated, field-effect transistor

May 6, 2007
Author(s)
Eric Gansen, Mary A. Rowe, Marion Greene, Danna Rosenberg, Todd E. Harvey, Mark Su, Robert Hadfield, Sae Woo Nam, Richard Mirin
We demonstrate the photon-number-resolving capabilities of a novel quantum dot, optically gated, field-effect transistor cooled to 4 K. Peaks are observed in the detector's response to highly attenuated laser pulses in accordance with Poisson statistics.

Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency

December 19, 2006
Author(s)
Mary A. Rowe, Eric Gansen, Marion Greene, Danna Rosenberg, Robert Hadfield, Todd E. Harvey, Sae Woo Nam, Mark Su, Richard Mirin
We investigate the operation of a quantum dot, optically gated, field-effect transistor as a photon detector. The detector exhibits time-gated, single-shot, single-photon sensitivity, a linear response, and an internal quantum efficiency of up to [68±18] %

Quantum dot single photon sources studied with superconducting single photon detectors

November 1, 2006
Author(s)
Martin Stevens, Robert Hadfield, Sae Woo Nam, Richard Mirin
We report the observation of photon antibunching from a single, self-assembled InGaAs quantum dot (QD) at temperatures up to 135 K. The second-order intensity correlation, g (2)(0), is less than 0.260 +or-} 0.024 for temperatures up to 100 K. At 120 K, g

Quantum dot single photon sources studied with superconducting single photon detectors

November 1, 2006
Author(s)
Martin J. Stevens, Robert Hadfield, Robert E. Schwall, Sae Woo Nam, Richard P. Mirin
We report the observation of photon antibunching from a single, self-assembled InGaAs quantum dot (QD) at temperatures up to 135 K. The second-order intensity correlation, g(2)(0), is less than 0.260 ± 0.024 for temperatures up to 100 K. At 120 K, g(2)(0)

Time-correlated single-photon counting with superconducting single-photon detectors

October 1, 2006
Author(s)
Martin Stevens, Robert Hadfield, Robert E. Schwall, Sae Woo Nam, Richard Mirin
We report use of a niobium nitride superconducting single-photon detector in a time-correlated single-photon counting experiment. The detector has a timing jitter of 68 +/- 3 ps full-width at half-maximum with a Gaussian temporal profile. The detector's

HEMT Amplified SET Measurements of Individual InGaAs Quantum Dots

August 25, 2006
Author(s)
Kevin Osborn, Mark W. Keller, Richard Mirin
A High Electron Mobility Transistor (HEMT) is used with a Single Electron Transistor (SET) to measure single electrons tunnelling into individual InGaAs quantum dots. The SET detects the charge motion as an electron tunnels from an underlying n-doped layer

Enhanced light extraction from circular Bragg grating coupled microcavities

July 18, 2006
Author(s)
Mark Su, Richard Mirin
A sevenfold enhancement of light extraction over a 130 nm bandwidth from a semiconductor at room temperature was achieved using circular Bragg gratings (CBGs) etched around the periphery of a vertical-cavity light-emitting structure. The CBG defined an in

Temperature dependence of quantum dot homogeneous linewidth

May 26, 2006
Author(s)
Joseph J. Berry, Martin Stevens, Richard Mirin, Kevin L. Silverman
We examine the temperature dependence of the ground state homogeneous linewidth in InGaAs/GaAs quantum dots. Measurements are performed on quantum dots in a semiconductor waveguide.

Recent Advances in Solid-State Single Photon Detectors

May 21, 2006
Author(s)
Danna Rosenberg, Sae Woo Nam, Richard Mirin, Philip A. Hiskett, Jane E. Nordholt
This paper reviews recent advances in the detection of single photons at visible and near-infrared wavelengths, focusing on detectors based on superconducting and semiconducting technologies.

High-resolution spectroscopic measurements of InGaAs/GaAs self-assembled quantum dots

May 12, 2006
Author(s)
Joseph J. Berry, Martin Stevens, Richard Mirin, Kevin L. Silverman
We report development of two absorption-based spectroscopic methods that have been adapted from atomic physics techniques to elucidate the basic physical properties of InGaAs/GaAs self-assembled quantum dots(SAQDs). Absorptive spectroscopic measurements

High-resolution spectral hole burning in InGaAs/GaAs quantum dots

February 10, 2006
Author(s)
Joseph J. Berry, Martin Stevens, Richard Mirin, Kevin L. Silverman
We report the use of continuous wave spectral hole burning to perform high-resolution spectroscopy of the homogeneous linewidth of self-assembled InGaAs/GaAs quantum dots at low temperature. We use this technique to examine the power broadening behavior of

Single photon source characterization with a superconducting single photon detector

December 26, 2005
Author(s)
Robert Hadfield, Martin Stevens, Stephen Gruber, Aaron J. Miller, Robert E. Schwall, Richard Mirin, Sae Woo Nam
Superconducting single photon detectors (SSPD) based on nanopatterned niobium nitride wires offer single photon counting at fast rates, low jitter, and low dark counts, from visible wavelengths well into the infrared. We demonstrate the first use of an

On-demand Single Photons from Individual Epitaxial Quantum Dots

October 24, 2005
Author(s)
Richard P. Mirin, Martin J. Stevens
We will describe our group's efforts to use epitaxial InGaAs/GaAs quantum dots as sources of on-demand single photons and indistinguishable single photons. We have demonstrated second order intensity correlation measurements, g 2τ, with g 2(0) as low as 0

High resolution, high collection efficiency in numerical aperture increasing lens microscopy of individual quantum dots

August 9, 2005
Author(s)
Zhiheng H. Liu, B. B. Goldberg, Stephen B. Ippolito, Anthony N. Vamivakas, M. S. Unlu, Richard Mirin
We demonstrate the application of a subsurface solid immersion technique to the photoluminescence spectroscopy of individual quantum dots. Contrasted with the conventional solid immersion microscopy, we used a numerical aperture increasing lens and moved

GaAs Buffer Layer Morphology and Lateral Distributions of InGaAs Quantum Dots

May 1, 2005
Author(s)
Alexana Roshko, Todd E. Harvey, Susan Y. Lehman, Richard Mirin, Kristine A. Bertness, Brittany Hyland
Atomic force microscopy was used to study the morphology of GaAs buffer layers and the density and height distributions of self-assembled InGaAs quantum dots (QDs) grown on these buffers by molecular beam epitaxy. The surface roughness and terrace size of

Carrier Dynamics and Homogeneous Broadening in Quantum Dot Waveguides

January 1, 2005
Author(s)
Kevin L. Silverman, Richard P. Mirin, Steven T. Cundiff, Benjamin Klein,
Coupling between InGaAs/GaAs quantum dots is investigated using differential transmission spectroscopy. Degenerate measurements show an initial carrier relaxation time that is relatively independent of carrier density. Two-color pump-probe techniques are