Osborn, K.
, Keller, M.
and Mirin, R.
(2006),
HEMT Amplified SET Measurements of Individual InGaAs Quantum Dots, ICPS-27, Flagstaff, AZ, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31767
(Accessed April 24, 2024)
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HEMT Amplified SET Measurements of Individual InGaAs Quantum Dots
Published
Author(s)
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Abstract
A High Electron Mobility Transistor (HEMT) is used with a Single Electron Transistor (SET) to measure single electrons tunnelling into individual InGaAs quantum dots. The SET detects the charge motion as an electron tunnels from an underlying n-doped layer, into a quantum dot lying in an intermediate layer. A HEMT on the He$^3$ stage with the SET, is used to extend the measurement bandwidth to 400 kHz. We demonstrate this technique with a measurement of the Stark shift in the first electron state in the quantum dot as a function of lateral electric field.Proceedings Title
ICPS-27
Volume
89
Conference Dates
July 26-30, 2004
Conference Location
Flagstaff, AZ, USA
Pub Type
Conferences
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Citation
Created August 24, 2006, Updated October 12, 2021