Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Wavelength bistability in two-section mode-locked quantum-dot diode lasers

Published

Author(s)

Mingming M. Feng, N. A. Brilliant, Steven T. Cundiff, Richard Mirin, Kevin L. Silverman

Abstract

We report a two-section mode-locked quantum dot laser with an emission wavelength that is bistable with respect to applied bias on the saturable absorber region. The two stable lasing wavelengths for this device are 1173 nm and 1166 nm with a power contrast ratio of over 30dB. The optical power and pulse width (6.5 ps) are almost identical in the two lasing modes under optimized conditions. The operation of this laser can be explained by the interplay of the spectral-hole burning and the quantum-confined Stark effect.
Citation
IEEE Photonics Technology Letters
Volume
19
Issue
11

Keywords

bistability, diode laser, modelocking, quantum dot

Citation

Feng, M. , Brilliant, N. , Cundiff, S. , Mirin, R. and Silverman, K. (2007), Wavelength bistability in two-section mode-locked quantum-dot diode lasers, IEEE Photonics Technology Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32556 (Accessed December 4, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created May 31, 2007, Updated October 12, 2021