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High-resolution spectral hole burning in InGaAs/GaAs quantum dots

Published

Author(s)

Joseph J. Berry, Martin Stevens, Richard Mirin, Kevin L. Silverman

Abstract

We report the use of continuous wave spectral hole burning to perform high-resolution spectroscopy of the homogeneous linewidth of self-assembled InGaAs/GaAs quantum dots at low temperature. We use this technique to examine the power broadening behavior of the homogeneous InGaAs/GaAs quantum dot line. We find that at a temperature of 9.8 K the spectral hole signal is well fit by a single Lorentizian line shape over the majority of the pump powers considered. Analysis of the power broadening, yields a full-width at half-maximum of 0.74 $\mu\textrmeV}$ for the homogeneous linewidth and a corresponding coherence time ($T_2$) of 1.76 ns.
Citation
Applied Physics Letters
Volume
88
Issue
061114/3

Keywords

Quantum Dots

Citation

Berry, J. , Stevens, M. , Mirin, R. and Silverman, K. (2006), High-resolution spectral hole burning in InGaAs/GaAs quantum dots, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32111 (Accessed April 21, 2024)
Created February 9, 2006, Updated October 12, 2021