High-resolution spectral hole burning in InGaAs/GaAs quantum dots
Joseph J. Berry, Martin Stevens, Richard Mirin, Kevin L. Silverman
We report the use of continuous wave spectral hole burning to perform high-resolution spectroscopy of the homogeneous linewidth of self-assembled InGaAs/GaAs quantum dots at low temperature. We use this technique to examine the power broadening behavior of the homogeneous InGaAs/GaAs quantum dot line. We find that at a temperature of 9.8 K the spectral hole signal is well fit by a single Lorentizian line shape over the majority of the pump powers considered. Analysis of the power broadening, yields a full-width at half-maximum of 0.74 $\mu\textrmeV}$ for the homogeneous linewidth and a corresponding coherence time ($T_2$) of 1.76 ns.
, Stevens, M.
, Mirin, R.
and Silverman, K.
High-resolution spectral hole burning in InGaAs/GaAs quantum dots, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32111
(Accessed May 30, 2023)