Rowe, M.
, Gansen, E.
, Greene, M.
, Rosenberg, D.
, Hadfield, R.
, Harvey, T.
, Nam, S.
, Su, M.
and Mirin, R.
(2006),
Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32397
(Accessed April 25, 2024)
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Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency
Published
Author(s)
, , , Danna Rosenberg, , , , ,
Abstract
We investigate the operation of a quantum dot, optically gated, field-effect transistor as a photon detector. The detector exhibits time-gated, single-shot, single-photon sensitivity, a linear response, and an internal quantum efficiency of up to [68±18] % at 4 K. Given the noise of the detector system, they find that a particular discriminator level can be chosen so the device operates with an internal quantum efficiency of [53(+ or -)11]% and dark counts of 0.003 counts per shot.Citation
Applied Physics Letters
Volume
89
Issue
253505
Pub Type
Journals
Download Paper
Keywords
efficiency, quantum dots, single-photon detection
Citation
Created December 18, 2006, Updated October 12, 2021