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Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency

Published

Author(s)

Mary A. Rowe, Eric Gansen, Marion Greene, Danna Rosenberg, Robert Hadfield, Todd E. Harvey, Sae Woo Nam, Mark Su, Richard Mirin

Abstract

We investigate the operation of a quantum dot, optically gated, field-effect transistor as a photon detector. The detector exhibits time-gated, single-shot, single-photon sensitivity, a linear response, and an internal quantum efficiency of up to [68±18] % at 4 K. Given the noise of the detector system, they find that a particular discriminator level can be chosen so the device operates with an internal quantum efficiency of [53(+ or -)11]% and dark counts of 0.003 counts per shot.
Citation
Applied Physics Letters
Volume
89
Issue
253505

Keywords

efficiency, quantum dots, single-photon detection

Citation

Rowe, M. , Gansen, E. , Greene, M. , Rosenberg, D. , Hadfield, R. , Harvey, T. , Nam, S. , Su, M. and Mirin, R. (2006), Single-photon detection using a quantum dot optically gated field-effect transistor with high internal quantum efficiency, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32397 (Accessed February 26, 2024)
Created December 18, 2006, Updated October 12, 2021