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Photon-number-resolving capabilities of a semiconductor quantum dot, optically gated, field-effect transistor

Published

Author(s)

Eric Gansen, Mary A. Rowe, Marion Greene, Danna Rosenberg, Todd E. Harvey, Mark Su, Robert Hadfield, Sae Woo Nam, Richard Mirin

Abstract

We demonstrate the photon-number-resolving capabilities of a novel quantum dot, optically gated, field-effect transistor cooled to 4 K. Peaks are observed in the detector's response to highly attenuated laser pulses in accordance with Poisson statistics.
Proceedings Title
Tech. Dig., Quantum Electronics and Laser Science Conf. (QELS)
Conference Dates
May 6-11, 2007
Conference Location
Baltimore, MD, USA
Conference Title
annual Conference on Lasers and Electro-Optics (CLEO ) and the Quantum Electronics and Laser Science Conference (QELS )

Keywords

detector, photon-number-resolution, single-photon

Citation

Gansen, E. , Rowe, M. , Greene, M. , Rosenberg, D. , Harvey, T. , Su, M. , Hadfield, R. , Nam, S. and Mirin, R. (2007), Photon-number-resolving capabilities of a semiconductor quantum dot, optically gated, field-effect transistor, Tech. Dig., Quantum Electronics and Laser Science Conf. (QELS), Baltimore, MD, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32561 (Accessed May 26, 2024)

Issues

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Created May 5, 2007, Updated October 12, 2021