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Displaying 26 - 50 of 78

Intercomparison of Methods for Detecting and Characterizing Voids in Bonded Wafer Pairs

October 1, 2010
Author(s)
Richard A. Allen, Andrew C. Rudack, David T. Read, Winthrop A. Baylies
The Wafer Bond Task Force of the SEMI MEMS Standards Committee has begun a round robin experiment to evaluate methods for identifying and characterizing voids in bonded wafer pairs for three-dimensional integrated circuit (3D IC) applications. Due to the

Resistivity Dominated by Surface Scattering in Sub-50 nm Cu Wires

January 25, 2010
Author(s)
Rebekah L. Graham, Glenn Alers, Thomas Mountsier, N. Shamma, S. Dhuey, R. H. Cabrini, Roy H. Geiss, David T. Read, S. Peddeti
The electron scattering mechanisms in sub-50nm copper lines were investigated to understand the extendibility of copper interconnects when the line width or thickness is less than the mean free path. Electron-beam lithography and a dual hardmask approach

A ROUND ROBIN EXPERIMENT TO PROVIDE PRECISION AND BIAS FOR SEMI MS5: TEST METHOD FOR WAFER BOND STRENGTH MEASUREMENTS USING MICRO-CHEVRON TEST STRUCTURES

December 7, 2009
Author(s)
Richard A. Allen, Winthrop A. Baylies, Paul Langer, Ralph Danzl, Frank W. DelRio, Gavin Horn, Roy Knechtel, Michael Mattes, David T. Read, Sumant Sood, Kevin T. Turner
An international round robin was organized to update SEMI Standard MS5: Test Method for Wafer Bond Strength Measurements using Micro-Chevron Test Structures. Results from the round robin allowed for inclusion of a Precision and Bias statement. The new

Adhesion, Copper Voiding, and Debonding Kinetics of Copper/Dielectric Diffusion Barrier Films

October 13, 2009
Author(s)
Ryan P. Birringer, Roey Shaviv, Thomas Mountsier, Jon Reid, Jian Zhou, Roy H. Geiss, David T. Read, Reinhold Dauskardt
Effects of the chemistry of electroplated copper films on stress-induced voiding and adhesion between the films and a SiN barrier layer are reported. The void density as observed by scanning electron microscopy decreased markedly with increasing Cu purity

MEASUREMENTS FOR MECHANICAL RELIABILITY OF THIN FILMS

September 23, 2009
Author(s)
David T. Read, Alex Volinsky
This paper reviews techniques for measurement of basic mechanical properties of thin films. Emphasis is placed on the adaptations needed to prepare, handle, and characterize thin films, and on adaptations of fracture mechanics for adhesion strength. The

Quantitative Characterization of Quantum Dot-labeled Lambda Phage for Escherichia coli Detection

July 24, 2009
Author(s)
Peter Yim, Matthew L. Clarke, Michael McKinstry, Silvia H. De Paoli Lacerda, Leonard F. Pease III, Marina A. Dobrovolskaia, Hyeong G. Kang, David T. Read, Shanmuga Sozhamannan, Jeeseong C. Hwang
We rapidly and quantitatively detect biological pathogens by combining the specificity of bacteriophage lambda with the sensitivity of CdSe/ZnS quantum dot (QD)-based fluorescence. Specifically, QD-decorated lambda phages bind to and allow detection of

EBSD Analysis of Narrow Damascene Copper Lines

May 11, 2009
Author(s)
Roy H. Geiss, David T. Read, Glenn Alers, Rebekah L. Graham
Orientation imaging microscopy (OIM) by electron back scatter diffraction (EBSD) has been used to examine grain size and crystallographic orientations of damascene Cu lines nominally 25 nm to 55 nm in width and 100 nm thick. These are the smallest

Electron Microscope Study of Strain in InGaN Quantum Wells in GaN Nanowires

April 1, 2009
Author(s)
Roy H. Geiss, David T. Read
GaN nanowires with InGaN quantum wells (QW) were grown on heated Si(111) substrates by molecular beam epitaxy (MBE) using elemental Ga and In and a radio-frequency-plasma N2 source. The growth procedures and the morphology of these nanowires have been

Micrometer-width damascene copper conductors at e10 MA/cm2

January 1, 2009
Author(s)
David T. Read, Roy H. Geiss
We have applied high amplitude (~10 MA/cm2) alternating current (AC) at 100 Hz and direct current (DC) to copper interconnect lines with widths in the few-micrometer range covered with a thick layer of SiO2. Under our test conditions of Joule heating, the

A Standard Method for Measuring Wafer Bond Strength for MEMS Applications

December 23, 2008
Author(s)
Richard A. Allen, Janet M. Cassard, Winthrop A. Baylies, David T. Read, George D. Quinn, Frank W. DelRio, Kevin T. Turner, Michael Bernasch, Joerg Bagdahn
A round robin, to provide precision and bias data for SEMI standard MS5-1107, Test Method for Wafer Bond Strength Measurements Using Micro-Chevron Test Structures, in underway. The precision and bias data, combined with experience in applying the test

Microscale Test Technique and Test Results for Aluminum Thin Films

October 16, 2008
Author(s)
David T. Read, Joseph D. McColskey, Yi-Wen Cheng
A microscale, skyhook-type tensile-test technique has been developed to extend tensile testing to micrometer-scale specimens. This technique has been used to perform tenisle tests of 1 m by 10 m by 180 m gauge sections of electron-beam-evaporated aluminum

Metrologies for Mechanical Response of Micro- and Nanoscale Systems

January 1, 2008
Author(s)
Robert Keller, Donna C. Hurley, David T. Read, Paul Rice
This chapter describes metrologies developed by NIST scientists and collaborators for mechanical properties of dimensionally-constrained materials; these approaches make use of methods inherently sensitive to small volumes. Attention is focused on

Peridynamic Simulation of Electromigration

January 1, 2008
Author(s)
David T. Read, Walter Gerstle, Stewart Silling, Vinod K. Tewary, Richard Lehoucq
A theoretical framework, based upon the peridynamic model, is presented for analytical and computational simulation of electromigration. The framework allows four coupled physical processes to be modeled simultaneously: mechanical deformation, heat

Evaluation of Thin Film Mechanical Properties by Means of Electrical Test Methods

September 30, 2007
Author(s)
Nicholas Barbosa, Robert Keller, David T. Read, Richard P. Vinci
The ability to measure the mechanical properties of thin films and small scale structures is essential in designing reliable components at the micro- and nano-scales. It is known that the mechanical properties of thin film materials deviate from relations

High Amplitude AC Tests of 300-nm Damascene Interconnect Structures

April 1, 2007
Author(s)
David T. Read, Roy H. Geiss, Glenn Alers
The AC fatigue test technique, which uses cyclic joule heating to apply thermal cycles to thin-film structures, was applied to copper lines and vias in damascene dielectric structures on silicon substrates. Specimen chips with two different types of

Multiscale Model of Germanium Quantum Dots in Silicon

March 1, 2007
Author(s)
David T. Read, Vinod Tewary
Atomic displacements, strains and strain energies in the neighborhood of near-spherical, coherent germanium ¿quantum dots¿ (QD) in crystalline silicon and near a 001} Si surface have been predicted by multiscale modeling, using a combination of classical