Argon ion beam alters grain structure of copper in surface preparation for EBSD

Published

August 1, 2010

Author(s)

Roy H. Geiss, David T. Read

Abstract

In preparing specimens of thin films of copper for examination by electron backscatter diffraction (EBSD), surface preparation is often necessary to produce acceptable EBSD patterns. Typically, removal of a rough, damaged or oxidized layer of the surface is required. Controlled erosion of the surface using an argon ion beam is a common technique. On applying recommended etching conditions to rough surfaces of pure copper films, we observed that the grain structure appeared to change. To further investigate this, we performed a series of controlled experiments on both thin plated films and on bulk copper. We chose as a starting structure samples that were prepared using electrochemical polishing. Secondary electron (SE) images and orientation maps deduced from EBSD data were used to evaluate the grain structures. The orientation maps used were inverse pole figures (IPF) constructed in the plane normal direction (ND) and also in an in-plane orthogonal direction (RD).

Proceedings Title

Microscopy and Microanalysis 2010 Proceedings

Volume

16

Issue

S2

Conference Dates

August 1-5, 2010

Conference Location

Portland, OR

Conference Title

Microscopy and Microanalysis 2010

Pub Type

Conferences

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DOI Link

Keywords

Argon, copper, EBSD, electroplated, grain size, ion beam

Citation

Geiss, R. and Read, D. (2010), Argon ion beam alters grain structure of copper in surface preparation for EBSD, Microscopy and Microanalysis 2010 Proceedings, Portland, OR, [online], https://doi.org/10.1017/S1431927610062136 (Accessed June 6, 2025)