Jose M. Ortiz, Tam H. Duong, Allen R. Hefner Jr., Jih-Sheng Lai
A multi-scale electro-thermal simulation approach is presented to optimize the design of a hybrid switch soft-switching inverter using a library of dynamic electro-thermal component models parameterized in terms of electrical, structural and material
Tam H. Duong, Jose M. Ortiz, David W. Berning, Allen R. Hefner Jr., Sei-Hyung Ryu, John W. Palmour
The purpose of this paper is to introduce a dynamic electro-thermal simulation and analysis approach for device design and short-circuit safe-operating-area (SOA) characterization using a physics-based electro-thermal Saber®* model. Model parameter
Tam H. Duong, Allen R. Hefner Jr., Jose M. Ortiz, Sei-Hyung Ryu , Edward VanBrunt, Lin Cheng, Scott Allen, John W. Palmour
The purpose of this paper is to present a physics-based electro-thermal Saber model and parameter extraction sequence for high-voltage SiC buffer layer n-channel insulated gate bipolar transistors (IGBTs). This model was developed by modifying and
Tam H. Duong, Allen R. Hefner Jr., Karl Hobart, Sei-Hyung Ryu, David Grider, David W. Berning, Jose M. Ortiz, Eugene Imhoff, Jerry Sherbondy
A new 60 A, 4.5 kV SiC JBS diode is presented and its performance is compared to Si PiN diodes used as the anti-parallel diode for 4.5 kV Si IGBTs. The current-voltage, capacitance-voltage, reverse recovery, and reverse leakage characteristics of both
Nanying Yang, Jose M. Ortiz, Tam H. Duong, Allen R. Hefner Jr., Kathleen Meehan
The CoolMOSTM transistor is a novel power MOSFET type device that utilizes a super-junction embedded within its drift region in order to improve the trade-off between on-resistance and breakdown voltage. The super-junction results in unique inter-electrode
Madelaine H. Hernandez, Jose M. Ortiz, Brian J. Grummel, Allen R. Hefner Jr., David W. Berning, Colleen E. Hood, Patrick McCluskey
A software-controlled thermal cycling test system developed for SiC module package characterization is presented. Its interface permits the flexible definition of testing parameters like variable data acquisition rates and customizable cycle transitions
Nanying Yang, Tam H. Duong, Jeong-O Jeong, Jose M. Ortiz, Allen R. Hefner Jr., Kathleen Meehan
This paper presents an automated parameter extraction software tool developed for constructing Silicon (Si) and Silicon Carbide (SiC) power diode models, which is called DIode Model Parameter extrACtion Tools (DIMPACT). This software tool extracts the data
Tam H. Duong, Jose M. Ortiz, R. N. Raju, Allen R. Hefner Jr.
This paper presents the results from a parametric simulation study that was conducted to optimize the performance of 100 A, 10 kV, 20 kHz half-bridge SiC MOSFET/JBS power modules. The power modules are being developed by the DARPA WBGS-HPE Phase II program
Jose M. Ortiz, Madelaine H. Hernandez, Tam H. Duong, Scott G. Leslie, Allen R. Hefner Jr.
The DARPA WBGS-HPE program is developing 100 A, 10 kV SiC power modules to demonstrate the viability of a 2.75 MVA Solid State Power Substation that uses 10 kV, 20 kHz switching-capable devices. Thermal network component models for these modules are
David W. Berning, Tam H. Duong, Jose M. Ortiz, Angel Rivera, Allen R. Hefner Jr.
A high-current, high-voltage-isolated gate drive circuit developed for characterization of high-voltage, high-frequency 10 kV, 100 A SiC MOSFET/JBS half-bridge power modules is presented and described. Gate driver characterization and simulation have shown
Tam H. Duong, Angel Rivera-Lopez, Allen R. Hefner Jr., Jose M. Ortiz
This paper presents the simulation of a 100 A, 10 kV Silicon Carbide (SiC) half-bridge power module operating at 20 kHz in a behavioral boost converter circuit. In the half-bridge module, 10 kV SiC power MOSFETs are used as the upper and lower switches
Madelaine H. Hernandez, Adwoa Akuffo, Colleen E. Hood, Jose M. Ortiz, Allen R. Hefner Jr.
New automated metric systems and procedures have been developed and introduced in order to evaluate the long stability of SiC PiN diodes, and long term stability results are presented for 10 kV SiC PiN diodes that are made using a new low degradation
Jose M. Ortiz, Tam H. Duong, Angel Rivera-Lopez, Allen R. Hefner Jr.
Simulated results for techniques used to validate the on-state, resistive load switching, inductive load switching, and high voltage depletion capacitance performance for 4H-SiC power MOSFETs are presented. The validation is performed using a script