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Experimental Evaluation of SiC PiN Diode Forward Bias Degradation and Long Term Stability

Published

Author(s)

Madelaine H. Hernandez, Adwoa Akuffo, Colleen E. Hood, Jose M. Ortiz, Allen R. Hefner Jr.

Abstract

New automated metric systems and procedures have been developed and introduced in order to evaluate the long stability of SiC PiN diodes, and long term stability results are presented for 10 kV SiC PiN diodes that are made using a new low degradation fabrication technology. The mayor objective of the new proposed long-term stability procedure is the monitoring of forward on-state voltage degradation and current area reduction at different forward bias stresses. Three experimental systems have been used to get the long-term stability study. Results show that it is possible for SiC diodes to perform well after 1000 hours of forward bias stress time.
Proceedings Title
Proc., Power Electronics Specialist Conference
Conference Dates
June 17-21, 2007
Conference Location
Orlando, FL, USA
Conference Title
Power Electronics Specialist Conference

Keywords

IGBT, long term stability, monitoring system, pulsed degradation, SiC PiN diodes, Silicon carbide

Citation

Hernandez, M. , Akuffo, A. , Hood, C. , Ortiz, J. and Hefner Jr., A. (2007), Experimental Evaluation of SiC PiN Diode Forward Bias Degradation and Long Term Stability, Proc., Power Electronics Specialist Conference, Orlando, FL, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32667 (Accessed January 25, 2022)
Created June 20, 2007, Updated October 12, 2021