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Displaying 26 - 50 of 53

Recent Developments in Thermoelectric Metrology at NIST

July 10, 2010
Author(s)
Winnie K. Wong-Ng, Joshua B. Martin, Nathan Lowhorn, Makoto Otani, Evan L. Thomas, Martin L. Green, Jason Hattrick-Simpers, Yonggao Y. Yan, Thanh Tran, Jihui Yang
We have successfully developed several important thermoelectric metrologies in recent years at NIST. First, a low temperature (10 K to 390 K) Seebeck coefficient Standard Reference Material (SRM™), Bi2Te3, which is crucial for inter-laboratory data

Manipulation of crystallinity boundary via process space investigations of pulsed laser deposited high-k HfO2-TiO2-Y2O3 combinatorial thin films

March 10, 2010
Author(s)
Jennifer L. Klamo, Peter K. Schenck, Peter G. Burke, Kao-Shuo Chang, Martin L. Green
Combinatorial library films of HfO2-TiO2-Y2O3, a high-k dielectric system, grown by pulsed laser deposition, exhibit visible boundary lines separating amorphous and crystalline phases. By changing processing space parameters, specifically substrate

RECENT INVESTIGATIONS OF Sr-Ca-Co-O THERMOELECTRIC MATERIALS

December 21, 2009
Author(s)
Winnie K. Wong-Ng, Guangyao Liu, Makoto Otani, Evan L. Thomas, Nathan Lowhorn, Martin L. Green, James A. Kaduk
Three low-dimension cobaltites in the Sr-Ca-Co-O system have been studied for their structure and thermoelectric properties. Using x-ray pole figure construction technique, a Ca3Co4O9 thin film showed excellent fiber texture but no ab in-plane texture. The

Measurement of heat capacity and enthalpy of formation of Nickel Silicide using Nano-calorimetry

November 2, 2009
Author(s)
Ravi Kummamuru, Lito De La Rama, Liang Hu, Mark D. Vaudin, Mikhail Efremov, Martin L. Green, David A. LaVan, Leslie Allen
We present characterization of energetics of the reaction between nickel and silicon thin films using differential scanning nano-calorimetry (nano-DSC). For the first time, nano-DSC measurements up to 850 °C and of enthalpy of thin film reactions have been

Development of a Seebeck Coefficient Standard Reference Material

August 7, 2009
Author(s)
Nathan Lowhorn, Winnie Wong-Ng, John Lu, Evan L. Thomas, Makoto Otani, Martin L. Green, Neil Dilley, Jeffrey Sharp, Thanh N. Tran
We have successfully developed a Seebeck coefficient Standard Reference Material (SRM ), Bi2Te3, that is crucial for interlaboratory data comparison and for instrument calibration. Certification measurements were performed using two different techniques on

Thermoelectric and Structural Characterization of Ba2Ho(Cu3-xCox)O6+y

June 13, 2009
Author(s)
Winnie K. Wong-Ng, Z Yang, Y F. Hu, Qingzhen Huang, Nathan Lowhorn, Makoto Otani, James A. Kaduk, Martin L. Green, Q Li
The search for thermoelectric materials for power generation and for solid-state cooling have led to the increased interest of layered cobalt-containing oxides because of their thermal stability at high temperature and their desirable thermoelectric

A High-throughput Screening System for Thermoelectric Material Exploration Based on Combinatorial Film Approach

May 7, 2009
Author(s)
Makoto Otani, Evan L. Thomas, Winnie Wong-Ng, Peter K. Schenck, Nathan Lowhorn, Martin L. Green, Hiroyuki Ohguchi
A high-throughput system that consists of a combinatorial tool (a sputtering deposition tool and a pulsed laser deposition tool) and two property screening devices, developed at NIST, was used for thermoelectric material exploration. The thermoelectric

Statistical analysis of a round-robin measurement survey of two candidate materials for a Seebeck coefficient Standard Reference Material

February 2, 2009
Author(s)
John Lu, Nathan Lowhorn, Winnie Wong-Ng, Weiping Zhang, Evan L. Thomas, Makoto Otani, Martin L. Green, Thanh N. Tran, Chris Caylor, Neil Dilley, Adams Downey, B Edwards, Norbert Elsner, S Ghamaty, Timothy Hogan, Qing Jie, Qiang Li, Joshua B. Martin, George S. Nolas, H Obara, Jeffrey Sharp, Rama Venkatasubramanian, Rhonda Willigan, Jihui Yang, Terry Tritt
In an effort to develop a Standard Reference Material (SRM ) for Seebeck coefficient, we have conducted a round-robin measurement survey of two candidate materials undoped Bi2Te3 and constantan (55% Cu and 45% Ni alloy). Measurements were performed in two

Round-Robin Studies of Two Potential Seebeck Coefficient Standard Reference Materials

January 14, 2009
Author(s)
Nathan Lowhorn, Winnie K. Wong-Ng, Weiping Zhang, John Lu, Makoto Otani, Evan L. Thomas, Martin L. Green, Thanh Tran
The scientific activities of NIST include the development and distribution of standard reference materials (SRM) for instrument calibration and inter-laboratory data comparison. Full characterization of a thermoelectric material requires measurement of the

Combinatorial study of the crystallinity boundary in the HfO2-TiO2-Y2O3 system using pulsed laser deposition library thin films

May 16, 2008
Author(s)
Peter K. Schenck, Jennifer L. Klamo, Nabil Bassim, Peter G. Burke, Yvonne B. Gerbig, Martin L. Green
HfO2-TiO2-Y2O3 is an interesting high-k dielectric system. Combinatorial library films of this system enable the study of the role of composition on phase formation as well as optical and mechanical properties. A library film of this system deposited at

Close Proximity Self-Aligned Shadow Mask for Sputter Deposition Onto a Membrane or Cavity

May 5, 2008
Author(s)
Ravi Kummamuru, L Hu, Lawrence P. Cook, M Y. Efremov, E A. Olson, Martin L. Green, L H. Allen
In this paper we report fabrication of a shadow mask designed for sputtering into cavities or on the back surface of freestanding silicon nitride (SiNx) membranes. Sputter deposition through a shadow mask typically results in spreading of the deposited

Determination of Work Functions in the Ta 1-x Al x N y /HfO 2 Advanced Gate Stack Using Combinatorial Methodology

January 24, 2008
Author(s)
Kao-Shuo Chang, Martin L. Green, Jason Hattrick-Simpers, John S. Suehle, Ichiro Takeuchi, Ozgur Celik, S De Gendt
Combinatorial methodology enables the generation of comprehensive and uniform samples, and therefore data sets, compared to the one-composition-at-a-time approach. We demonstrate the efficacy of combinatorial methodology applied to Ta1-xAlxNy alloys as

Combinatorial Methodology for the Exploration of Metal Gate Electrodes on HfO 2 for the Advanced Gate Stack

January 23, 2008
Author(s)
Kao-Shuo Chang, Martin L. Green, John S. Suehle, Jason Hattrick-Simpers, Ichiro Takeuchi, K Ohmori, T Chikyow, S De Gendt, Prashant Majhi
Combinatorial methodology offers an efficient platform to accelerate the exploration of new materials. We demonstrate the effectiveness of this technique on the study of new metal gates for the advanced gate stack. We report two examples, Ni-Ti-Pt ternary

Instability of Flatband Voltage in HfO2 Gate Stack Structures under Reducing/Oxidizing Annealing Conditions

August 13, 2007
Author(s)
K Ohmori, P Ahmet, M Yoshitake, T Chikyow, K Shiraishi, K Yamabe, H Watanabe, Y Akasaka, Kao-Shuo Chang, Martin L. Green, K Yamada
We have applied a combinatorial approach to fabricate work function (WF) tuned Pt-W alloy films and used the films as metal electrodes for HfO2/SiO2/Si capacitors. As the ratio RPt of Pt to W changes from 0 to 1, the WF value varies continuously from 4.7

High Contrast Scanning Nano-Raman Spectroscopy of Silicon

June 15, 2007
Author(s)
N Lee, R Hartschuh, D Mehtani, A Kisliuk, M D. Foster, Alexei Sokolov, J F. Maguire, Martin L. Green
We have demonstrated that scanning nano-Raman spectroscopy (SNRS), generally known as tip enhanced Raman spectroscopy (TERS), with side illumination optics can be effectively used for analysis of silicon based structures at the nanoscale. Even though the

The Use of Apertures to Create Discrete Combinatorial Libraries Using Pulsed Laser Deposition

May 18, 2007
Author(s)
Nabil Bassim, Peter K. Schenck, Eugene Donev, Edwin J. Heilweil, Eric J. Cockayne, Martin L. Green, Leonard Feldman
In Pulsed-Laser Deposition (PLD), there are many processing parameters that influence film properties which may be studied such as substrate-target distance, background reactive gas pressure, laser energy, substrate temperature and composition in multi

A High-Throughput Thermoelectric Power-Factor Screening Tool for Rapid Construction of Thermoelectric Property Diagrams

January 23, 2007
Author(s)
Makoto Otani, Nathan Lowhorn, Peter K. Schenck, Winnie K. Wong-Ng, Martin L. Green, K Itaka, H Koinuma
We have developed a high throughput screening tool that maps out thermoelectric power factors of combinatorial composition-spread film libraries. The screening tool allows us to measure the electrical conductivity and Seebeck coefficient of over 1000

Combinatorial Study of Ni-Ti-Pt Ternary Metal Gate Electrodes on HfO 2 for the Advanced Gate Stack

October 2, 2006
Author(s)
Kao-Shuo Chang, Martin L. Green, John S. Suehle, Eric M. Vogel, Hao Xiong, Jason Hattrick-Simpers, Ichiro Takeuchi, O Famodu, K Ohnaka, T Chikyow, Prashant Majhi, B H. Lee, M Gardner
We have fabricated combinatorial Ni-Ti-Pt ternary metal gate thin film libraries on HfO2 using magnetron co-sputtering, to investigate flat-band voltage shift (DVfb) and leakage current density (JL) variations. Wavelength dispersive spectroscopy (WDS)