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Combinatorial Methodology for the Exploration of Metal Gate Electrodes on HfO2 for the Advanced Gate Stack



Kao-Shuo Chang, Martin L. Green, John S. Suehle, Jason Hattrick-Simpers, Ichiro Takeuchi, K Ohmori, T Chikyow, S De Gendt, Prashant Majhi


Combinatorial methodology offers an efficient platform to accelerate the exploration of new materials. We demonstrate the effectiveness of this technique on the study of new metal gates for the advanced gate stack. We report two examples, Ni-Ti-Pt ternary composition spreads, and Ta1-xAlxNy binary composition spreads, using a combinatorial sputtering tool. For the Ni-Ti-Pt library, wavelength dispersive spectroscopy (WDS), and scanning x-ray microdiffraction spectroscopy were used to determine compositions, and structures, respectively. Scanning Kelvin probe microscopy (SKPM) was used to measure work functions (Fm) directly. Our results show Fm variation is consistent with the variation for the corresponding bulk values. For the Ta1-xAlxNy metal gate electrodes, the extracted equivalent oxide thickness (EOT) map suggests thermal stability of the stack, and flat-band voltage shift (DVfb) varied systematically as per our expectation.
ECS Transactions


combinatorial methodology, work function


Chang, K. , Green, M. , Suehle, J. , Hattrick-Simpers, J. , Takeuchi, I. , Ohmori, K. , Chikyow, T. , De, S. and Majhi, P. (2008), Combinatorial Methodology for the Exploration of Metal Gate Electrodes on HfO<sub>2</sub> for the Advanced Gate Stack, ECS Transactions (Accessed April 23, 2024)
Created January 23, 2008, Updated February 19, 2017