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Manipulation of crystallinity boundary via process space investigations of pulsed laser deposited high-k HfO2-TiO2-Y2O3 combinatorial thin films

Published

Author(s)

Jennifer L. Klamo, Peter K. Schenck, Peter G. Burke, Kao-Shuo Chang, Martin L. Green

Abstract

Combinatorial library films of HfO2-TiO2-Y2O3, a high-k dielectric system, grown by pulsed laser deposition, exhibit visible boundary lines separating amorphous and crystalline phases. By changing processing space parameters, specifically substrate temperature during deposition and composition of the library film, we are able to manipulate the boundary and hence, the microstructural properties of the film. High-throughput x-ray diffraction and spectroscopic reflectometry are essential tools for measuring the properties of the resulting library films altered via these changes in processing. Electrical measurements confirm that the dielectric constant of the library films are both composition and microsctructure dependent.
Citation
Journal of Applied Physics
Volume
107
Issue
5

Keywords

combinatorial, high-k, pulsed laser deposition

Citation

Klamo, J. , Schenck, P. , Burke, P. , Chang, K. and Green, M. (2010), Manipulation of crystallinity boundary via process space investigations of pulsed laser deposited high-k HfO2-TiO2-Y2O3 combinatorial thin films, Journal of Applied Physics (Accessed July 20, 2024)

Issues

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Created March 9, 2010, Updated October 12, 2021