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Combinatorial Study of Ni-Ti-Pt Ternary Metal Gate Electrodes on HfO2 for the Advanced Gate Stack

Published

Author(s)

Kao-Shuo Chang, Martin L. Green, John S. Suehle, Eric M. Vogel, Hao Xiong, Jason Hattrick-Simpers, Ichiro Takeuchi, O Famodu, K Ohnaka, T Chikyow, Prashant Majhi, B H. Lee, M Gardner

Abstract

We have fabricated combinatorial Ni-Ti-Pt ternary metal gate thin film libraries on HfO2 using magnetron co-sputtering, to investigate flat-band voltage shift (DVfb) and leakage current density (JL) variations. Wavelength dispersive spectroscopy (WDS) results show that over 90% 1% of Ni and Ti, and 75% 1% of Pt were attained in the library. A more negative DVfb is observed close to the Ti-rich corner than close to the Ni- and Pt-rich corners, implying smaller Fm near the Ti-rich corners and higher Fm near Ni- and Pt-rich corners. In addition, measured JL values are consistent with the observed DVfb variations.
Citation
Applied Physics Letters
Volume
89
Issue
14

Keywords

combinatorial, flat-band voltage shift, leakage current density, library, ternary metal gate thin films

Citation

Chang, K. , Green, M. , Suehle, J. , Vogel, E. , Xiong, H. , Hattrick-Simpers, J. , Takeuchi, I. , Famodu, O. , Ohnaka, K. , Chikyow, T. , Majhi, P. , Lee, B. and Gardner, M. (2006), Combinatorial Study of Ni-Ti-Pt Ternary Metal Gate Electrodes on HfO<sub>2</sub> for the Advanced Gate Stack, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=850953 (Accessed April 24, 2024)
Created October 2, 2006, Updated February 19, 2017