Chang, K.
, Green, M.
, Suehle, J.
, Vogel, E.
, Xiong, H.
, Hattrick-Simpers, J.
, Takeuchi, I.
, Famodu, O.
, Ohnaka, K.
, Chikyow, T.
, Majhi, P.
, Lee, B.
and Gardner, M.
(2006),
Combinatorial Study of Ni-Ti-Pt Ternary Metal Gate Electrodes on HfO<sub>2</sub> for the Advanced Gate Stack, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=850953
(Accessed October 8, 2024)
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Combinatorial Study of Ni-Ti-Pt Ternary Metal Gate Electrodes on HfO2 for the Advanced Gate Stack
Published
Author(s)
, , , , , , Ichiro Takeuchi, O Famodu, K Ohnaka, T Chikyow, Prashant Majhi, B H. Lee, M Gardner
Abstract
We have fabricated combinatorial Ni-Ti-Pt ternary metal gate thin film libraries on HfO2 using magnetron co-sputtering, to investigate flat-band voltage shift (DVfb) and leakage current density (JL) variations. Wavelength dispersive spectroscopy (WDS) results show that over 90% 1% of Ni and Ti, and 75% 1% of Pt were attained in the library. A more negative DVfb is observed close to the Ti-rich corner than close to the Ni- and Pt-rich corners, implying smaller Fm near the Ti-rich corners and higher Fm near Ni- and Pt-rich corners. In addition, measured JL values are consistent with the observed DVfb variations.Citation
Applied Physics Letters
Volume
89
Issue
14
Pub Type
Journals
Download Paper
Keywords
combinatorial, flat-band voltage shift, leakage current density, library, ternary metal gate thin films
Citation
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Created October 2, 2006, Updated February 19, 2017