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Search Publications by: Andras E. Vladar (Fed)

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Displaying 126 - 150 of 190

Photomask Dimensional Metrology in the SEM Part I: Has Anything Really Changed?

January 1, 2003
Author(s)
Michael T. Postek, Andras Vladar, Marylyn H. Bennett
Photomask dimensional metrology in the scanning electron microscope (SEM) has not evolved as rapidly as the metrology of resists and integrated circuit features on wafers. This has been due partly to the 4x (or 5x) reduction in the optical steppers and

Photomask Dimensional Metrology in the SEM: Has Anything Really Changed?

December 1, 2002
Author(s)
Michael T. Postek, Andras Vladar, Marylyn H. Bennett
Photomask dimensional metrology in the scanning electron microscope (SEM) has not evolved as rapidly as the metrology of resists and integrated circuit features on wafers. This has been due partly to the 4x (or 5x) reduction in the optical steppers and

Scanning Electron Microscope Analog of Scatterometry

July 1, 2002
Author(s)
John S. Villarrubia, Andras Vladar, J R. Lowney, Michael T. Postek
Optical scatterometry has attracted a great deal of interest for linewidth measurement due to its high repeatability and capability of measuring sidewall shape. We have developed an analogous and complementary technique for the scanning electron microscope

Two-dimensional Simulation Modeling in Imaging and Metrology Research

July 1, 2002
Author(s)
Michael T. Postek, Andras Vladar, J R. Lowney, William J. Keery
Traditional Monte Carlo modeling of the electron beam-specimen interactions in a scanning electron microscope (SEM) produces information about electron beam penetration and output signal generation at either a single beam-landing location, or multiple

Silicon Nanostructures Fabricated by Scanning Probe Lithography and TMAH Etching

January 1, 2002
Author(s)
F S. Chien, W F. Hsieh, S Gwo, Andras Vladar, John A. Dagata
Fabrication of silicon nanostructures is a key technique for the development of monolithically integrated optoelectronic circuits. We demonstrate that the process of scanning probe lithography (SPL) and anisotropic TMAH etching is a low-cost and reliable

Critical Dimension Metrology and the Scanning Electron Microscope

December 1, 2001
Author(s)
Michael T. Postek, Andras Vladar
Metrology is a principal enabler for the development and manufacture of current and future generations of semiconductor devices. With the potential of 130-nm, and 100-nm, and even smaller linewidths and high-aspect-ratio structures, the scanning electron

Trial Shape-Sensitive Linewidth Measurement System

November 1, 2001
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
This is a report for a project to develop a scanning electron microscope (SEM) based shape-sensitive linewidth measurement system by improving the method by improving the method by which SEM data are analyzed. We report significant developments in

Active Monitoring and Control of Electron-Beam-Induced Contaminaition

August 1, 2001
Author(s)
Andras Vladar, Michael T. Postek, R Vane
The vacuum system of all scanning electron microscopes (SEMs), even in the so-called clean instruments, have certain hydrocarbon residues that the vacuum pumps do not effectively remove. The cleanliness of the vacuum and the amount and nature of these

Active Monitoring and Control of Electron-Beam-Induced Contamination

August 1, 2001
Author(s)
Andras Vladar, Michael T. Postek, R Vane
The vacuum systems of all scanning electron microscopes (SEMs), even in the so-called clean instruments, have certain hydrocarbon residues that the vacuum pumps do not effectively remove. The cleanliness of the vacuum and the amount and nature of these

Edge Determination for Polycrystalline Silicon Lines on Gate Oxide

August 1, 2001
Author(s)
John S. Villarrubia, Andras Vladar, J R. Lowney, Michael T. Postek
In a scanning electron microscope (SEM) top-down secondary electron image, areas within a few tens of nanometers of the line edges arc characteristically brighter than the rest of the image. In general, the shape of the secondary electron signal within

Reference Material 8091: New Scanning Electron Microscope Sharpness Standard

August 1, 2001
Author(s)
Andras Vladar, Michael T. Postek, Nien F. Zhang, Robert D. Larrabee, Samuel N. Jones, Russell E. Hajdaj
Reference Material (RM 8091) is intended primarily for use in checking the sharpness performance of scanning electron microscopes. It is supplied as a small, approximately 2 mm x 2 mm diced semiconductor chip. This sample is capable of being mounted

Reference Material 8091: New Scanning Electron Microscope Sharpness Standard

August 1, 2001
Author(s)
Andras Vladar, Michael T. Postek, Nien F. Zhang, Robert D. Larrabee, Samuel N. Jones, Russell E. Hajdaj
All scanning electron microscope-based inspection instruments, whether they are in a laboratory or on the production line, slowly lose their performance and then the instrument is no longer capable of providing as good quality, sharp images as before. This

SEM Sentinel-SEM Performance Measurement System

August 1, 2001
Author(s)
Bradley N. Damazo, Andras Vladar, Alice V. Ling, Alkan Donmez, Michael T. Postek, Crossley E. Jayewardene
This paper describes the design and implementation of a system for monitoring the performance of a critical dimension measurement scanning electron microscope (CD-SEM). Experiments were performed for tests involving diagnosis of the vacuum system and

Critical Dimension Metrology in the Scanning Electron Microscope

June 29, 2001
Author(s)
Michael T. Postek, Andras Vladar
Metrology is a principal enabler for the development and manufacture of current and future generations of semiconductor devices. With the potential of 130, 100 nanometer and even smaller linewidths and high aspect ratio structures, the scanning electron
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