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Search Publications by: Andras E. Vladar (Fed)

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Displaying 76 - 100 of 185

Design of an on-chip microscale nanoassembly system

February 10, 2009
Author(s)
Jason J. Gorman, Yong Sik Kim, Andras Vladar, Nicholas G. Dagalakis
A microscale nanoassembly system has been designed for the fabrication of nanodevices and in situ electromechanical characterisation of nanostructures. This system consists of four Microelectromechanical Systems(MEMS)-based nanomanipulators positioned

International photomask linewidth comparison by NIST and PTB

October 17, 2008
Author(s)
James E. Potzick, Ronald G. Dixson, Richard Quintanilha, Michael T. Stocker, Andras Vladar, Egbert Buhr, Bernd Bodermann, Wolfgang Hassler-Grohne, Harald Bosse, C.G. Frase
In preparation of the international Nano1 linewidth comparison on photomasks between 8 national metrology institutes, NIST and PTB have started a bilateral linewidth comparison in 2008, independent of and prior to the Nano1 comparison in order to test the

Cellulose Nanocrystals the Next Big Nano-thing?

August 6, 2008
Author(s)
Michael T. Postek, Andras Vladar, John A. Dagata, Natalia Farkas, Bin Ming, Ronald Sabo, Theodore H. Wegner
Biomass surrounds us from the smallest alga to the largest redwood tree. Even the largest trees owe their strength to a newly-appreciated class of nanomaterials known as cellulose nanocrystals (CNC). Cellulose, the world s most abundant natural, renewable

Simulated SEM Images for Resolution Measurement

July 30, 2008
Author(s)
Petr Cizmar, Andras Vladar, Bin Ming, Michael T. Postek
Resolution is a key performance metric, which often defines the quality of a scanning electron microscope (SEM). Traditionally, there is the subjective measurement of the distance between two points on special ''resolution'' samples and there are several

The Potentials of Helium Ion Microscopy for Semiconductor Process Metrology

February 6, 2008
Author(s)
Michael T. Postek, Andras Vladar
Semiconductor manufacturing is always looking for more effective ways to monitor and control the manufacturing process. Helium Ion Microscopy (HIM) presents a new approach to process monitoring which has several potential advantages over the traditional

Instrumentation, Metrology, and Standards for Nanomanufacturing

September 10, 2007
Author(s)
Michael T. Postek, Andras Vladar, John A. Kramar, L A. Stern, John Notte, Sean McVey
Helium Ion Microscopy (HIM) is a new, potentially disruptive technology for nanotechnology and nanomanufacturing. This methodology presents a potentially revolutionary approach to imaging and measurements which has several potential advantages over the

The Helium Ion Microscope: A New Tool for Nanotechnology and Nanomanufacturing

September 1, 2007
Author(s)
Michael T. Postek, Andras Vladar, John A. Kramar, L A. Stern, John Notte, Sean McVey
Helium Ion Microscopy (HIM) is a new, potentially disruptive technology for nanotechnology and nanomanufacturing. This methodology presents a potentially revolutionary approach to imaging and measurements which has several potential advantages over the

Helium Ion Microscopy: A New Technique for Semiconductor Metrology and Nanotechnology

January 1, 2007
Author(s)
Michael T. Postek, Andras Vladar, John A. Kramar, L A. Stern, John Notte, Sean McVey
The Helium Ion Microscope (HIM) offers a new, potentially disruptive technique for nano-metrology. This methodology presents an approach to measurements for nanotechnology and nano-manufacturing which has several potential advantages over the traditional

Design of an On-Chip Micro-Scale Nanoassembly System

November 3, 2006
Author(s)
Jason J. Gorman, Yong Sik Kim, Andras Vladar, Nicholas Dagalakis
In this paper, the design and proposed operation of a MEMS-based nanoassembly system is presented. The nanoassembly system is comprised of four nanomanipulators that can work independently or cooperatively. The design of the nanomanipulators will be

Advanced Metrology Needs for Nanoelectronics Lithography

October 1, 2006
Author(s)
Stephen Knight, Ronald Dixon, Ronald L. Jones, Eric Lin, Ndubuisi G. Orji, Richard M. Silver, Andras Vladar, Wen-li Wu
The semiconductor industry has exploited productivity improvements through aggressive feature size reduction for over four decades. While enormous effort has been expended in developing the optical lithography tools to print ever finer features

Nano-Tip Electron Gun for the Scanning Electron Microscope

January 1, 2006
Author(s)
Andras Vladar, Zsolt Radi, Michael T. Postek, David C. Joy
Through this study the most important questions and problems associated with nano-tips and their possible applications to SEMs were investigated. These were related to the tip making procedures, the theoretical assessment of the Hitachi S-6000 critical

Advanced Metrology Needs for Nanotechnology and Nanomanufacturing

November 1, 2005
Author(s)
Michael T. Postek, John S. Villarrubia, Andras Vladar
Advances in fundamental nanoscience, design of nanomaterials, and ultimately manufacturing of nanometer scale products all depend to some degree on the capability to accurately and reproducibly measure dimensions, properties, and performance

Scanning electron microscope dimensional metrology using a model-based library

November 1, 2005
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
The semiconductor electronics industry places significant demands upon secondary electron imaging to obtain dimensional measurements that are used for process control or failure analysis. Tolerances for measurement uncertainty and repeatability are smaller

A Simulation Study of Repeatability and Bias in the CD-SEM

July 1, 2005
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
Abstract: The ability of a critical dimension scanning electron microscope (CD-SEM) to resolve differences in the widths of two lines depends on the instrument?s measurement repeatability and any sample dependent biases. The dependence of repeatability and

Scanning Electron Microscope Dimensional Metrology Using a Model-Based Library

April 1, 2005
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
The semiconductor electronics industry places significant demands upon secondary electron imaging to obtain dimensional measurements that are used for process control or failure analysis. Tolerances for measurement uncertainty and repeatability are smaller

Influence of Focus Variation on Linewidth Measurements

March 3, 2005
Author(s)
M Tanaka, John S. Villarrubia, Andras Vladar
The influence of spatial resolution on line width measurements in the critical dimension scanning electron microscope (CD-SEM) was investigated experimentally. Measurement bias variation and measurement repeatabilities of four edge detection algorithms

Photomask Metrology, Photomask Fabrication Technology

January 1, 2005
Author(s)
Richard M. Silver, Andras Vladar
In this paper we will focus on the different metrology techniques used to measure features on photomasks. In view of the above discussion, we will focus on the importance of accurately measuring features and developing traceability. The metrology

Scanning Electron Microscope Dimensional Metrology using a Model-based Library

January 1, 2005
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
The semiconductor electronics industry places significant demands upon secondary electron imaging to obtain dimensional measurements that are used for process control or failure analysis. Tolerances for measurement uncertainty and repeatability are smaller

Test of CD-SEM Shape-Sensitive Linewidth Measurement

July 1, 2004
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
In a model-based library (MBL) approach to scanning electron microscope (SEM) linewidth measurement, a library of simulation results for a range of lineshapes is searched for a match to the measured image of the unknown line. Compared to standard

Laser Sample Stage-Based Image Resolution Enhancement Method for SEMs

May 24, 2004
Author(s)
Andras Vladar, Crossley E. Jayewardene, Bradley N. Damazo, William J. Keery, Michael T. Postek
The development of a very fast, very accurate laser stage measurement system facilitates a new method to enhance the image and line scan resolution of scanning electron microscopes (SEMs). This method, allows for fast signal intensity and displacement