Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Advanced Metrology Needs for Nanoelectronics Lithography

Published

Author(s)

Stephen Knight, Ronald Dixon, Ronald L. Jones, Eric Lin, Ndubuisi G. Orji, Richard M. Silver, Andras Vladar, Wen-li Wu

Abstract

The semiconductor industry has exploited productivity improvements through aggressive feature size reduction for over four decades. While enormous effort has been expended in developing the optical lithography tools to print ever finer features, significant advances have also been required to measure the printed features. In this article we will discuss the current state of the art in the metrology for measuring critical dimensions of printed features for scanning electron microscopy and atomic force microscopy, and describe work at the National Institute of Standards and Technology advancing these tools as well as exploratory work on two new promising techniques, scatterfield microscopy and small angle X-ray scatterometry.
Citation
Journal De Physique Iii
Volume
7
Issue
8

Keywords

atomic force microscopy, optical scatterfield microscopy, optical scatterometry, scanning electron, small ange x-ray scatterometry

Citation

Knight, S. , Dixon, R. , Jones, R. , Lin, E. , Orji, N. , Silver, R. , Vladar, A. and Wu, W. (2006), Advanced Metrology Needs for Nanoelectronics Lithography, Journal De Physique Iii (Accessed June 22, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created September 30, 2006, Updated October 12, 2021