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Search Publications by: David S Simons (Assoc)

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Displaying 76 - 100 of 148

Diffusion Barrier Cladding in Si/SiGe Resonant Interband Tunneling Diodes and Their Patterned Growth on PMOS Source/Drain Regions

January 1, 2003
Author(s)
N Jin, A T. Rice, P R. Berger, P E. Thompson, C Rivas, R Lake, S Sudirgo, J J. Kempisty, B Curanovic, S L. Rommel, K D. Hirschman, S K. Kurinec, P Chi, David S. Simons, S.J. Chung
Si/SiGe resonant interband tunnel diodes (RITD) employing delta-doping spikes that demonstrate negative differential resistance (NDR) at room temperature are presented. Efforts have focused on improving the tunnel diode peak-to-valley current ratio (PVCR)

Calibration of a Stopping Power Model for Silicon Based on Analysis of Neutron Depth Profiling and Secondary Ion Mass Spectrometry Measurements

June 1, 2002
Author(s)
Kevin J. Coakley, Huaiyu H. Chen-Mayer, George P. Lamaze, David S. Simons, P E. Thompson
We measure the boron concentration versus depth profile within a silicon sample with four delta-doped planes by secondary ion mass spectrometry. In a neutron depth profiling (NDP) experiment, we illuminate the sample with a neutron beam. Nuclear reactions

P-on-N Si Interband Tunnel Diode Grown by Molecular Beam Epitaxy

January 1, 2001
Author(s)
David S. Simons, P Chi, S L. Rommel, T E. Dillon, K D. Hobart, P E. Thompson, P R. Berger
Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type δ-doped injectors separated by an intrinsic Si

Epitaxial Si-Based Tunnel Diodes

December 1, 2000
Author(s)
P E. Thompson, K D. Hobart, M E. Twigg, S L. Rommel, N Jin, P R. Berger, R Lake, A C. Seabaugh, P Chi, David S. Simons
Tunneling devices in combination with transistors offer a way to extend the performance of existing technologies by increasing circuit speed and decreasing static power dissipation. We have investigated Si-based tunnel diodes grown using molecular beam

Si Resonant Interband Tunnel Diodes Grown by Low-Temperature Molecular Beam Epitaxy

August 1, 1999
Author(s)
P E. Thompson, K D. Hobart, M E. Twigg, G Jernigan, T E. Dillon, S L. Rommel, P R. Berger, David S. Simons, P Chi, R Lake, A C. Seabaugh
Si resonant interband tunnel diodes that demonstrate negative differential resistance at room temperature are presented. The structures were grown using low temperature (320 C) molecular beam epitaxy followed by a post-growth anneal. After a 650 C, 1 min

Atomic Hydrogen for the Formation of Abrupt Sb Doping Profiles in MBE-Grown Si

May 1, 1998
Author(s)
P E. Thompson, C Silvestre, M E. Twigg, G Jernigan, David S. Simons
Previously atomic hydrogen has been shown to be effective in reducing the segregation of Ge on Si[100] during solid source molecular beam epitaxygrowth. In this work we have investigated atomic hydrogen to determine if it is equally effective in reducing