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Displaying 26 - 50 of 61

Final Report of the e-SRM Committee on the Optimal Delivery of Services to Customers for Standard Reference Materials

June 1, 2001
Author(s)
John C. Travis, Sally Bruce, D J. Clarke, James R. Ehrstein, Michael S. Epstein, Daniel G. Friend, T E. Gills, Kenneth G. Inn, Larry L. Lucas, James E. Potzick, M H. Saunders, N M. Trahey, G M. Ugiansky, R. Michael Verkouteren, D P. Vigliotti, Robert Watters
The e-SRM committee was formed at the request of Technology Services (TS) to recommend ways to employ appropriate technologies to optimize the consistency, efficiency, and effectiveness with which NIST provides technical support to customers for Standard

Neolithography Consortium: A Progress Report

January 1, 2001
Author(s)
James E. Potzick
The role of process simulation is becoming an increasingly important part of microlithography process control and photomask metrology as wafer feature sizes become smaller than the exposure wavelength, because the pattern transfer from photomask to wafer

The Neolithography Consortium

June 1, 2000
Author(s)
James E. Potzick
The role of process simulation in microlithography is becoming an increasingly important part of process control as wafer feature sizes become smaller than the exposure wavelength, because the pattern transfer from photomask to wafer is nonlinear. An

Measurement Uncertainity and Noise in Nanometrology

June 1, 1999
Author(s)
James E. Potzick
The measurement of feature sizes on integrated circuit photomasks and wafers is an economically important and technically challenging application of nanometrology. The displacement measuring laser heterodyne interferometer is a popular tool in such

Measurement Uncertainty and Noise in Nanometrology

January 1, 1999
Author(s)
James E. Potzick
The measurement of feature sizes on integrated circuit photomasks and wafers is an economically important and technically challenging application of nanometrology. The displacement measuring laser heterodyne interferometer is a popular tool in such

Accuracy Differences Among Photomask Metrology Tools and Why They Matter

December 1, 1998
Author(s)
James E. Potzick
A variety of different kinds of photomask critical dimensions (CD) metrology tools are available today to help meet current and future metrology challenges. These tools are based on different operating principles, and have different cost, throughput

Accuracy Differences Among Photomask Metrology Tools--and Why They Matter

September 1, 1998
Author(s)
James E. Potzick
A variety of different kinds of photomask critical dimension (CD) metrology tools are available today to help meet current and future metrology challenges. These tools are based on different operating principles, and have differing cost, throughput

Accuracy and Traceability in Dimensional Measurements

June 1, 1998
Author(s)
James E. Potzick
Dimensional measurements of importance to microlithography include feature sizes and feature placement on photomasks and wafers, overlay eccentricities, defect and particle sizes on masks and wafers, and many others. A common element is that the object

A Method to Characterize Overlay Tool Misalignments and Distortions

July 1, 1997
Author(s)
Richard M. Silver, James E. Potzick, Fredric Scire, Christopher J. Evans, Michael L. McGlauflin, Edward A. Kornegay, Robert D. Larrabee
A new optical alignment artifact under development at NIST is described. This structure, referred to as a stepped microcone, is designed to assist users and manufacturers of overlay metrology tools in the reduction of tool-induced measurement errors. We

Photomask Metrology in the Era of Neolithography

February 1, 1997
Author(s)
James E. Potzick
The appearance of smaller photomask feature sizes, high density patterns, and optical enhancements such as phase shifters and OPC features, and the increasing importance of subresolution mask characteristics, can render traditional mask metrology

Benchmarking the Length Measurement Capabilities of the National Institute of Standards and Technology

January 1, 1997
Author(s)
Richard M. Silver, J Land, Jack A. Stone Jr., Ronald G. Dixson, Bryon S. Faust, James E. Potzick, Michael T. Postek, et al
A cross-section of measurements from the Precision Engineering Division within the National Institute of Standards and Technology is benchmarked against other leading National Measurement Institutes. We present a variety of length-related calibration

New NIST-Certified Small Scale Pitch Standard

January 1, 1997
Author(s)
James E. Potzick
The National Institute of Standards and Technology is developing a dimensional pitch standard covering the range 1 ?m to 10 mm, intended for the calibration of microscope magnification and dimensional metrology instrument scales. While NIST has long

New Certified Length Scale for Microfabrication Metrology

September 1, 1996
Author(s)
James E. Potzick
The National Institute of Standards and Technology is developing a dimensional pitch standard covering the range 1 micrometers to 10 mm, intended for the calibration of microscope magnification and of dimensional metrology instrument scales. Called SRM

High Accuracy Overlay Measurements

May 1, 1996
Author(s)
Richard M. Silver, James E. Potzick, Fredric Scire, Robert D. Larrabee
The reduced critical dimensions of semiconductor devices place more stringent requirements on the precision and accuracy of overlay metrology tools used to monitor stepper feature placement. The use of mix and match stepper techniques and step and scan

New NIST-Certified Length Microscale

January 1, 1996
Author(s)
James E. Potzick
The National Institute of Standards and Technology is developing a simple one-dimension certified pitch standard (or scale) covering the range 1 um to 10 mm, intended for the calibration of microscope magnification and dimensional metrology instrument

Optical Overlay Metrology at NIST

January 1, 1996
Author(s)
Richard M. Silver, Amy Singer, L Carroll, S Berg-cross, James E. Potzick
Many of the significant challenges in making accurate overlay registration measurements are discussed. An understanding of the causes of the errors affecting these measurements is a prerequisite to improving accuracy and also for the design of standard

Strut Structure and Rigid Joint Therefor

January 1, 1996
Author(s)
James E. Potzick
A highly rigid structure is provided using six struts connected at three upper and three lower nodes to upper and lower support structures. The joint assemblies are formed by half- spherical balls attached to the ends of each of the struts, and retained

Improved Photomask Metrology Through Exposure Emulation

July 1, 1995
Author(s)
James E. Potzick
The ultimate purpose of the photomask in IC manufacture is to define the image to be printed on a silicon wafer. Of the many factors which affect this aerial image in the wafer stepper, some are properties of the stepper projection system and some are

Metrology with the Ultraviolet Scanning Transmission Microscope

May 1, 1995
Author(s)
Richard M. Silver, James E. Potzick, Y Hu
A novel design for an ultraviolet critical dimension measurement transmission microscope utilizing the Stewart platform as the rigid main structure has been implemented. This new design shows improved vibration characteristics and is able to accommodate

Overlay Measurements and Standards

May 1, 1995
Author(s)
Richard M. Silver, James E. Potzick, Robert D. Larrabee
The relative misalignment of features produced by different mask levels (i.e., overlay error) is projected to become an increasingly important problem to the semiconductor industry as the size of the critical features continues to decrease. In response to

Re-Evaluation of the Accuracy of NIST Photomask Linewidth Standards

May 1, 1995
Author(s)
James E. Potzick
Every artifact measurement standard has some uncertainty associated with its calibration, and the NIST Photomask Linewidth Standards are no exception. This uncertainty is caused by a combination of those factors which influence the calibration measurement